PD-97271 RevA
Plug N Drive
TM
Integrated Power
Module for Energy Efficient Motor Drives
Description
IRAM136-0461G
Series
4A, 600V
International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for elec-
tronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive
applications, such as fan or refrigerator compressor drives, this module offers the highest level of integra-
tion available in the market today. It features an input diode rectification bridge and a three-phase inverter,
complete with bootstrap diodes, high voltage gate driver IC, current shunt resistor and temperature
sensor. This high performance AC motor-driver is housed in a compact single-in-line isolated package for a
very simple design.
The internal shunt offers easy current feedback for precise control and safe operation. A built-in tem-
perature monitor and logic level shut-down function, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
Features
•
•
•
•
•
•
•
•
•
•
•
Internal Rectifier Diode Bridge
Internal Shunt Resistor
Integrated Gate Drivers and Bootstrap Diodes
Temperature Monitor
Undervoltage lockout for all channels
Matched propagation delay for all channels
Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.1~0.3kW / up to 253V, 50/60Hz
Isolation 2000V
RMS
/1min
1
23
Absolute Maximum Ratings
Parameter
V
RRM
V
CES
V
+
Description
Input Bridge Blocking Voltage
IGBT Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (F
PWM
=20kHz)
RMS Phase Current (F
PWM
=20kHz)
Pulsed RMS Phase Current (t
p
<100ms, F
PWM
=20kHz)
PWM Carrier Frequency
Power dissipation per IGBT @ T
C
=25°C
Isolation Voltage (1min)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque (M3 screw)
Max. Value
600
600
450
3.6
2
5
20
16
2000
-40 to +150
-40 to +150
1.0
Units
V
I
O
@ T
C
=25°C
I
O
@ T
C
=100°C
I
O PK
F
PWM
P
d
V
ISO
T
J
(IGBT & Diodes)
T
J
(Driver IC)
T
kHz
W
V
RMS
°C
Nm
www.irf.com
1
IRAM136-0461G
Internal Electrical Schematic - IRAM136-0461G
AC (1)
D
10
D
11
Q
1
D
1
D
12
AC (2)
Vbus_1 (3)
D
13
Q
4
D
4
Q
5
D
5
Q
6
D
6
Q
2
D
2
Q
3
D
3
Vbus_2 (4)
R
10
GND_1 (5)
R
1
VB1 (11)
U, VS1 (12)
VB2 (9)
V, VS2 (10)
VB3 (7)
W, VS3 (8)
D
7
D
8
D
9
D
14
R
2
D
15
R
3
D
16
R
4
D
17
R
5
R
6
D
18
D
19
23 VS1
22
21 20 19
18 17
VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
LO2 15
R
9
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
ITRIP(21)
Shunt+ (22)
VTH (13)
VCC (14)
VSS (23)
THERMISTOR
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7
8
9
10
11
12 13
Driver IC
LO3 14
R
8
R
7
C
5
2
www.irf.com
IRAM136-0461G
Absolute Maximum Ratings (Continued)
Symbol
I
DC
I
F(AV)
I
FSM
I
2
t
I
2
t
0.5
Parameter
Input Bridge DC Output Current
Average Output Forward Current
Peak One Cycle Non-Repetitive
Surge Current @ T
J
=150°C
I
2
t for fusing
I
2
t
0.5
for fusing
Max
9.4
8.7
100
95
45.12
638
Units
A
A
A
A
A
2
s
@T
C
=100°C, 180° cond. square wave
@T
C
=100°C, 180° cond. sine wave
8.3ms Sine Pulse rated V
RRM
applied
10ms Sine Pulse 80% rated V
RRM
applied
10ms Sine Pulse 80% rated V
RRM
applied
A
2
s
0.5
t=0.1 to 10 ms, no Voltage applied
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur.
All voltage parameters are absolute voltages referenced to COM/V
SS
.
Symbol
I
BDF
P
BR Peak
V
S1,2,3
V
B1,2,3
V
CC
Parameter
Bootstrap Diode Peak Forward
Current
Bootstrap Resistor Peak Power
(Single Pulse)
High Side floating supply voltage
High Side floating supply voltage
Low Side and logic fixed supply
voltage
Input voltage LIN, HIN, I
Trip
Min
---
---
V
B1,2,3
- 25
-0.3
-0.3
Max
4.5
25.0
V
B1,2,3
+0.3
600
20
Lower of
(V
SS
+15V)
or V
CC
+0.3V
Units Conditions
A
W
V
V
V
t
P
= 10ms,
T
J
= 150°C, T
C
=100°C
t
P
=100µs, T
C
=100°C
V
IN
-0.3
V
www.irf.com
3
IRAM136-0461G
Input Bridge Section Electrical Characteristics @T
J
= 25°C
Symbol
V
FM
r
t
V
F(TD)
I
RM
Parameter
Forward Voltage Drop
Forward Slope resistance
Threshold Voltage
Reverese Leakage Current
Min
---
---
---
---
---
---
Typ
1
0.9
22
0.81
2
115
Max
1.2
1.05
59
0.84
15
190
Units
V
V
m
V
µA
T
J
=25°C, V
R
= rated V
RR
T
J
=150°C, V
R
= rated V
RR
Conditions
@ I
FM
= 4A, T
J
=25°C
@ I
FM
= 4A, T
J
=150°C
T
J
=150°C
Inverter Section Electrical Characteristics @T
J
= 25°C
Symbol
V
(BR)CES
V
(BR)CES
/ T
V
CE(ON)
Parameter
Collector-to-Emitter Breakdown
Voltage
Temperature Coeff. Of Breakdown
Voltage
Collector-to-Emitter Saturation
Voltage
Zero Gate Voltage Collector
Current
Diode Forward Voltage Drop
Bootstrap Diode Forward Voltage
Drop
Bootstrap Resistor Value
Bootstrap Resistor Tolerance
Min
600
---
---
---
---
---
---
---
V
BDFM
R
BR
R
BR
/R
BR
--
---
---
---
Typ
---
0.74
1.95
2.40
1
160
1.25
1.20
--
---
22
---
Max
---
---
2.20
2.80
75
---
1.65
1.60
1.25
1.10
---
±5
%
V
V
µA
Units Conditions
V
V/°C
V
V
IN
=5V, I
C
=250µA
V
IN
=5V, I
C
=1.0mA
(25°C - 150°C)
I
C
=2A, V
CC
=15V
I
C
=2A, V
CC
=15V, T
J
=150°C
V
IN
=5V, V
+
=600V
V
IN
=5V, V
+
=600V, T
J
=150°C
I
C
=2A
I
C
=2A, T
J
=150°C
I
F
=1A
I
F
=1A, T
J
=125°C
I
CES
V
FM
4
www.irf.com
IRAM136-0461G
Inverter Section Switching Characteristics @ T
J
= 25°C
Symbol
E
ON
E
OFF
E
TOT
E
REC
t
RR
E
ON
E
OFF
E
TOT
E
REC
t
RR
Q
G
RBSOA
Parameter
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Swtiching Loss
Turn-off Switching Loss
Total Switching Loss
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
Min
---
---
---
---
---
---
---
---
---
---
---
Typ
180
65
245
5
240
210
80
290
15
285
0.84
FULL SQUARE
Max
260
140
400
15
---
305
150
455
35
---
1.3
ns
nC
See CT1
I
C
=2A, V
+
=400V, V
GE
=15V
T
J
=150°C, I
C
=2A, V
P
=600V
Reverse Bias Safe Operating Area
V
+
= 450V
V
CC
=+15V to 0V
T
J
=150°C, V
P
=600V,
SCSOA
Short Circuit Safe Operating Area
10
---
---
µs
V
+
= 360V,
V
CC
=+15V to 0V
See CT2
See CT3
µJ
ns
See CT1
I
C
=2A, V
+
=400V
V
CC
=15V, L=1mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
µJ
Units Conditions
I
C
=2A, V
+
=400V
V
CC
=15V, L=1mH
Energy losses include "tail" and
diode reverse recovery
T
J
=150°C, V
P
=600V, t
SC
<10µs
I
CSC
Short Circuit Collector Current
---
11
---
A
V
+
= 360V, V
GE
=15V
V
CC
=+15V to 0V
See CT2
www.irf.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
