MIXA30WB1200TED
Converter - Brake - Inverter
Module
XPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
= 43 A
V
RRM
= 1600 V V
CES
= 1200 V V
CES
= 1200 V
I
DAVM
= 105 A I
C25
I
FSM
= 17 A I
C25
= 320 A V
CE(sat)
= 1.8 V V
CE(sat)
= 1.8 V
Part name
(Marking on product)
MIXA30WB1200TED
21
D11
D13
D15
22
D7
T1
D1
D5
T5
18
17
6
7
1
2
3
16
15
T3
D3
20
19
5
NTC
8
4
D12
D14
D16
14
T7
11
10
T2
D2
12
T4
D4
13
D6
T6
9
E 72873
Pin configuration see outlines.
23
24
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
20110916c
© 2011 IXYS All rights reserved
1-8
MIXA30WB1200TED
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
SCSOA
t
SC
I
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 25 A; V
GE
= 15 V
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A
inductive load
V
CE
= 600 V; I
C
= 15 A
V
GE
= ±15 V; R
G
= 39
W
V
GE
= ±15 V; R
G
= 39
W;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
43
30
150
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
1.8
2.1
5.4
6.0
0.02
0.2
76
70
40
250
100
2.5
3.0
2.1
6.5
1.5
500
T
VJ
= 125°C
V
CEK
= 1200 V
T
VJ
= 125°C
75
10
100
0.84
A
µs
A
K/W
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 39
W;
non-repetitive
(per IGBT)
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 30 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -600 A/µs
I
F
= 30 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
max.
1200
44
30
Unit
V
A
A
V
V
µC
A
ns
mJ
1.95
1.95
3.5
30
350
0.9
2.2
1.2
T
C
= 25°C unless otherwise stated
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20110916c
© 2011 IXYS All rights reserved
2-8
MIXA30WB1200TED
Brake T7
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
SCSOA
t
SC
I
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 9 A; V
GE
= 15 V
I
C
= 0.3 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
inductive load
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100
W
V
GE
= ±15 V; R
G
= 100
W;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
17
12
60
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
1.8
2.1
5.4
6.0
0.1
2.1
6.5
0.1
500
28
70
40
250
100
1.1
1.1
30
10
40
2.0
T
VJ
= 125°C
V
CEK
= 1200 V
T
VJ
= 125°C
A
µs
A
K/W
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 100
W;
non-repetitive
(per IGBT)
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 5 A; V
GE
= 0 V
V
R
= V
RRM
V
R
= 600 V
di
F
/dt = 200 A/µs
I
F
= 5 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
Ratings
typ. max.
1200
12
8
1.95
1.95
0.5
0.6
6
350
0.2
3.4
2.2
0.5
Unit
V
A
A
V
V
mA
mA
µC
A
ns
mJ
K/W
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20110916c
© 2011 IXYS All rights reserved
3-8
MIXA30WB1200TED
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
I
2
t
P
tot
V
F
I
R
R
thJC
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. forward surge current
I
2
t value for fusing
total power dissipation
forward voltage
reverse current
thermal resistance junction to case
Conditions
T
VJ
= 25°C
sine 180°
rect.; d =
1
/
3
t = 10 ms; sine 50 Hz
t = 10 ms; sine 50 Hz
T
C
= 80°C
T
C
= 80°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
C
= 25°C
I
F
= 50 A
V
R
= V
RRM
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
Ratings
typ. max.
1600
37
105
320
280
510
390
110
1.34
1.34
0.2
1.1
1.7
0.02
Unit
V
A
A
A
A
A
2
s
A
2
s
W
V
V
mA
mA
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
M
d
d
S
d
A
R
pin-chip
R
thCH
Weight
Equivalent Circuits for Simulation
I
V
0
R
0
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.75
Ratings
typ. max.
5.0
5.25
3375
Ratings
typ. max.
125
150
125
2500
-
Unit
kW
K
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
min.
-40
-40
Unit
°C
°C
°C
V~
Nm
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
3
6
6
5
with heatsink compound
0.02
180
6
mW
K/W
g
Symbol
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
Definitions
rectifier diode
IGBT
free wheeling diode
IGBT
free wheeling diode
Conditions
D8 - D13
T1 - T6
D1 - D6
T7
D7
min.
T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 150°C
Ratings
typ. max.
0.88
9
1.1
55
1.2
27
1.1
153
1.15
170
Unit
V
mW
V
mW
V
mW
V
mW
V
mW
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20110916c
© 2011 IXYS All rights reserved
4-8
MIXA30WB1200TED
Circuit Diagram
21
D11
D13
D15
7
1
2
3
22
D7
D1
T1
D3
T3
D5
T5
16
15
18
17
6
20
19
5
NTC
8
4
D12
D14
D16
14
T7
11
10
T2
D2
12
T4
D4
13
D6
T6
9
23
24
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
2D Data Matrix:
FOSS-ID 6 digits
Batch # 6 digits
Part number
M
I
X
A
30
WB
1200
T
ED
= Module
= IGBT
= XPT
= Standard
= Current Rating [A]
= 6-Pack + 3~ Rectifier Bridge & Brake Unit
= Reverse Voltage [V]
= NTC
= E2-Pack
XXXXXXXXXX yywwx
Logo
UL
Part name Date Code Location
Ordering
Standard
Part Name
MIXA30WB1200 TED
Marking on Product
MIXA30WB1200TED
Delivering Mode Base Qty Ordering Code
Box
6
509 119
20110916c
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
5-8
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