NVD5890NL
40 V, 3.7 mW, 123 A, Single N−Channel
DPAK
Features
Power MOSFET
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
MSL 1 @ 260°C
100% Avalanche Tested
AEC Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Parameter
Symbol
V
DSS
V
GS
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
t
p
=10ms
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
E
AS
P
D
I
D
I
D
Value
40
"20
123
95
107
24
18.5
4.0
400
100
−55
to
175
100
320
W
A
A
°C
A
mJ
W
A
Unit
V
V
A
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V
(BR)DSS
40 V
R
DS(ON)
MAX
3.7 mW @ 10 V
5.5 mW @ 4.5 V
I
D
MAX
123 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
D
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent (R
qJC
) (Notes 1 &
3)
Power Dissipation
(R
qJC
) (Note 1)
Continuous Drain Cur-
rent (R
qJA
) (Notes 1, 2,
3)
Power Dissipation
(R
qJA
) (Notes 1 & 2)
Pulsed Drain Current
Current Limited by Package
(Note 3)
G
S
4
1 2
N−Channel
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
GS
= 10 V, L = 0.3 mH, I
L(pk)
=
46.2 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
58
90NLG
2
Drain 3
1
Gate Source
Y
= Year
WW
= Work Week
5890NL = Device Code
G
= Pb−Free Package
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and suty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
October, 2012
−
Rev. 0
1
Publication Order Number:
NVD5890NL/D
NVD5890NL
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.4
37
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
V
GS
= 10 V, I
D
= 50 A
V
GS
= 4.5 V, I
D
= 50 A
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 50 A, R
G
= 2.0
W
12
35
38
11
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 50 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 50 A
4760
580
385
84
42
4.2
13.7
18.8
nC
nC
pF
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
40
40
1.0
100
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
7.4
2.9
4.4
16.3
2.5
V
mV/°C
3.7
5.5
mW
S
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5890NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 50 A
V
GS
= 0 V,
I
S
= 20 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 50 A
T
J
= 25°C
T
J
= 25°C
0.86
0.78
35
19
16
34
nC
1.2
1.0
ns
V
Symbol
Test Condition
Min
Typ
Max
Unit
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3
NVD5890NL
TYPICAL PERFORMANCE CURVES
250
10 V
I
D
, DRAIN CURRENT (A)
200
150
100
50
0
4.8 V
V
GS
= 4.4 V
250
200
150
100
50
0
2.0
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
5.0
2.5
3.0
3.5
4.0
4.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5.0
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
V
DS
≥
10 V
4V
3.6 V
3.2 V
0.0
1.0
2.0
3.0
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0.008
0.006
0.004
0.002
0.000
I
D
= 50 A
T
J
= 25°C
0.010
Figure 2. Transfer Characteristics
T
J
= 25°C
0.008
0.006
0.004
0.002
0.001
V
GS
= 4.5 V
V
GS
= 10 V
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
240
280
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.0
I
D
= 50 A
V
GS
= 10 V
1.5
I
DSS
, LEAKAGE (nA)
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
10000
1.0
T
J
= 125°C
0.5
−50
−25
0
25
50
75
100
125 150
175
1000
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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NVD5890NL
TYPICAL PERFORMANCE CURVES
7000
6000
C, CAPACITANCE (pF)
5000
4000
3000
2000
1000
0
0
C
rss
10
20
30
DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
10
8
6
4
2
0
Q
gs
Q
gd
V
DS
= 15 V
I
D
= 50 A
T
J
= 25°C
0
10
20
30
40
50
60
70
Q
G
, TOTAL GATE CHARGE (nC)
80
90
40
Figure 7. Capacitance Variation
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
V
GS
= 0 V
T
J
= 25°C
Q
T
Figure 8. Gate−To−Source Voltage vs.
Total Charge
100
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 20 V
I
D
= 50 A
V
GS
= 10 V
t, TIME (ns)
t
d(off)
t
d(on)
V
GS
= 0 V
T
J
= 25°C
75
100
t
r
50
t
f
25
10
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95 1.00
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
I D, DRAIN CURRENT (AMPS)
100
10
ms
100
ms
10
V
GS
≤
20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
1 ms
10 ms
dc
100
1
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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