74V1T66
SINGLE BILATERAL SWITCH
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 0.3ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
= 25°C
LOW "ON" RESISTANCE:
R
ON
= 6.5Ω (TYP.) AT V
CC
= 5V, I
I/O
= 1mA
SINE WAVE DISTORTION:
0.04% AT V
CC
= 5V, f = 1KHz
COMPATIBLE WITH TTL OUTPUTS ON
CONTROL PIN:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74V1T66STR
74V1T66CTR
DESCRIPTION
The 74V1T66 is an advanced high-speed CMOS
SINGLE BILATERAL SWITCH fabricated in
silicon gate C
2
MOS technology. It achieves high
speed propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This bilateral switch handles
rail to rail analog and digital signals that may vary
across the full power supply range (from GND to
V
CC
).
The C input is provided to control the switch and
it’s compatible with standard TTL output; the
switch is ON (port I/O is connected to Port O/I)
PIN CONNECTION AND IEC LOGIC SYMBOLS
when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can be used in many
application as Battery Powered System, Test
Equipment. It’s available in the commercial and
extended temperature range in SOT23-5L and
SOT323-5L package.
All inputs and output are equipped with protection
circuits against static discharge, giving them ESD
immunity and transient excess voltage.
April 2004
1/11
74V1T66
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
4
3
5
SYMBOL
I/O
O/I
C
GND
V
CC
NAME AND FUNCTION
Independent Input/Output
Independent Output/Input
Enable Input (Active
HIGH)
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
CONTROL
H
L
* High Impedance State
SWITCH FUNCTION
ON
OFF *
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
IC
V
O
I
IK
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Control Input Voltage
DC Output Voltage
DC Input Diode Current
DC Control Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
±
20
- 20
±
20
±
50
±
50
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
T
stg
Storage Temperature
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
IC
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Control Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) V
CC
= 5.0V
Parameter
Value
4.5 to 5.5
0 to V
CC
0 to 5.5
0 to V
CC
-55 to 125
0 to 20
Unit
V
V
V
V
°C
ns/V
1) V
IN
from 0.8V to 2V on control pin
2/11
74V1T66
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
T
A
= 25°C
Min.
C
IN
C
I/O
C
PD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance
(note 1)
Typ.
3
10
3
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
ANALOG SWITCH CHARACTERISTICS
(GND = 0V; T
A
= 25°C)
Test Condition
Symbol
Parameter
V
CC
(V)
5.0(*)
5.0(*)
V
IN
(V
p-p
)
4
f
IN
= 1 KHz R
L
= 10 KΩ, C
L
= 50 pF
Adjust f
IN
voltage to obtain 0 dB at V
OS
.
Increase f
IN
Frequency until dB meter reads -3dB
R
L
= 50Ω, C
L
= 10 pF
V
IN
is centered at V
CC
/2
Adjust f
IN
Voltage to obtained 0dBm at V
IS
R
L
= 600Ω, C
L
= 50 pF, f
IN
= 1KHz sine wave
R
L
= 600Ω, C
L
= 50 pF, f
IN
= 1KHz square wave
t
r
= t
f
= 6ns
Value
Unit
Typ.
0.04
180
%
MHz
f
MAX
Sine Wave
Distortion (THD)
Frequency
Response
(Switch ON)
Feed through
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal
Output)
5.0(*)
-60
dB
5.0(*)
60
mV
(*) Voltage range is 5.0V
±
0.5V
4/11
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