DISCRETE SEMICONDUCTORS
DATA SHEET
BF1211; BF1211R; BF1211WR
N-channel dual-gate MOS-FETs
Product specification
2003 Dec 16
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier
Excellent low frequency noise performance
Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
1
BF1211; BF1211R;
BF1211WR
PINNING
PIN
1
2
3
4
drain
gate 2
gate 1
DESCRIPTION
source
handbook, 2 columns
4
3
2
MSB014
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
Top view
BF1211 marking code:
LFp
Fig.1
Simplified outline (SOT143B).
handbook, 2 columns
3
4
handbook, halfpage
3
4
2
Top view
BF1211R marking code:
LHp
1
2
MSB035
1
MSB842
Top view
BF1211WR marking code:
MK
Fig.2
Simplified outline (SOT143R).
Fig.3
Simplified outline (SOT343R).
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
T
j
PARAMETER
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
junction temperature
2
f = 1 MHz
f = 400 MHz
input level for k = 1% at
40 dB AGC
CONDITIONS
25
100
MIN.
30
2.1
15
0.9
105
TYP.
6
30
180
40
2.6
30
1.6
150
MAX.
UNIT
V
mA
mW
mS
pF
fF
dB
dBV
C
2003 Dec 16
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF1211
BF1211R
BF1211WR
DESCRIPTION
plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
VERSION
SOT143B
SOT143R
SOT343R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
I
D
I
G1
I
G2
P
tot
PARAMETER
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
BF1211; BF1211R
BF1211WR
T
stg
T
j
Note
1. T
s
is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-s)
BF1211; BF1211R
BF1211WR
PARAMETER
thermal resistance from junction to soldering point
185
155
K/W
K/W
VALUE
UNIT
storage temperature
junction temperature
T
s
116
C;
note 1
T
s
122
C;
note 1
65
180
180
+150
150
mW
mW
C
C
CONDITIONS
MIN.
6
30
10
10
MAX.
V
mA
mA
mA
UNIT
2003 Dec 16
3
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
250
MDB828
Ptot
(mW)
200
150
(2)
(1)
100
50
0
0
50
100
150
Ts (°C)
200
(1) BF1211WR.
(2) BF1211; BF1211R.
Fig.4 Power derating curve.
STATIC CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
V
(BR)DSS
PARAMETER
drain-source breakdown voltage
CONDITIONS
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 100
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 75 k;
note 1
V
G2-S
= V
DS
= 0 V; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0 V; V
G2-S
= 4 V
MIN.
6
6
6
0.5
0.5
0.3
0.35
11
MAX.
10
10
1.5
1.5
1
1
19
50
20
UNIT
V
V
V
V
V
V
V
mA
nA
nA
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
I
G1-S
I
G2-S
Note
1. R
G1
connects G
1
to V
GG
= 5 V.
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
2003 Dec 16
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C;
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 15 mA; unless otherwise specified.
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F
PARAMETER
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
noise figure
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 11 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S (opt)
f = 800 MHz; Y
S
= Y
S (opt)
G
tr
power gain
f = 200 MHz; G
S
= 2 mS; B
S
= B
S (opt)
;
G
L
= 0.5 mS; B
L
= B
L (opt)
f = 400 MHz; G
S
= 2 mS; B
S
= B
S (opt)
;
G
L
= 1 mS; B
L
= B
L (opt)
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
S (opt)
;
G
L
= 1 mS; B
L
= B
L (opt)
X
mod
cross-modulation
input level for k = 1%; f
w
= 50 MHz;
f
unw
= 60 MHz; note 1
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
Note
1. Measured in test circuit Fig.21.
90
100
92
105
dBV
dBV
dBV
CONDITIONS
pulsed; T
j
= 25
C
MIN.
25
TYP.
30
2.1
1.1
0.9
15
3.5
0.9
1.3
34
29
24
MAX.
40
2.6
30
1.6
2
UNIT
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
reverse transfer capacitance f = 1 MHz
2003 Dec 16
5
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