IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA208X-1000C
3Q Hi-Com Triac
22 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack"
plastic package. This triac is intended for use in motor control circuits where very high
blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This
"series C" triac will commutate the full rated RMS current at the maximum rated junction
temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high voltage capability
3. Applications
•
•
•
Compressor starting controls
General purpose motor controls
Reversing induction motor control circuits e.g. vertical axis washing machines
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 73 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
2
6
35
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
1000
65
8
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20F
NXP Semiconductors
BTA208X-1000C
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
Typ
13
23
Max
35
35
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA208X-1000C
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
BTA208X-1000C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
2 / 13
NXP Semiconductors
BTA208X-1000C
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 73 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
10
I
T(RMS)
(A)
8
73 °C
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
1000
8
65
71
21
100
2
5
0.5
150
125
003aaa970
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t
p
= 10 ms; SIN
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aaa969
25
I
T(RMS)
(A)
20
6
15
4
10
2
5
0
- 50
0
50
100
T
h
(°C)
150
0
10
- 2
10
- 1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 73 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BTA208X-1000C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
3 / 13
NXP Semiconductors
BTA208X-1000C
3Q Hi-Com Triac
P
tot
(W)
10
8
6
12
003aaa967
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
71
T
h(max)
(°C)
80
89
98
107
116
4
2
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
80
I
TSM
(A)
60
003aaa968
40
I
T
20
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA208X-1000C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
4 / 13
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