74HC04
Hex Inverter
High−Performance Silicon−Gate CMOS
The 74HC04 is identical in pinout to the LS04 and the MC14069.
The device inputs are compatible with Standard CMOS outputs; with
pullup resistors, they are compatible with LSTTL outputs.
The device consists of six three−stage inverters.
Features
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MARKING
DIAGRAMS
•
•
•
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0
mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
ESD Performance: HBM
>
2000 V; Machine Model
>
200 V
Chip Complexity: 36 FETs or 9 Equivalent Gates
These are Pb−Free Devices
LOGIC DIAGRAM
A1
1
2
Y1
14
14
1
SOIC−14
D SUFFIX
CASE 751A
1
HC04G
AWLYWW
14
14
1
TSSOP−14
DT SUFFIX
CASE 948G
1
HC
04
ALYW
G
G
A2
3
4
Y2
A3
5
6
Y3
Y=A
A4
9
8
Y4
HC04
= Device Code
A
= Assembly Location
WL or L = Wafer Lot
Y
= Year
WW or W = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
A5
11
10
Y5
FUNCTION TABLE
A6
13
12
Y6
Inputs
A
Outputs
Y
H
L
Pinout: 14−Lead Packages
(Top View)
V
CC
14
A6
13
Y6
12
A5
11
Y5
10
A4
9
Y4
8
L
H
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
A1
2
Y1
3
A2
4
Y2
5
A3
6
Y3
7
GND
©
Semiconductor Components Industries, LLC, 2007
March, 2007
−
Rev. 1
1
Publication Order Number:
74HC04/D
74HC04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol
V
CC
V
in
I
in
I
out
I
CC
P
D
T
stg
T
L
V
out
Parameter
Value
Unit
V
V
V
mA
mA
mA
mW
_C
_C
260
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air,
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
SOIC Package†
TSSOP Package†
DC Output Voltage (Referenced to GND)
– 0.5 to + 7.0
– 0.5 to V
CC
+ 0.5
– 0.5 to V
CC
+ 0.5
±20
±25
±50
500
450
– 65 to + 150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V
in
and
V
out
should be constrained to the range GND
v
(V
in
or V
out
)
v
V
CC
. Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either GND or V
CC
). Unused outputs must be left open.
†Derating
−
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package:
−
6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
in
, V
out
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
(Figure 1)
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Min
2.0
0
– 55
0
0
0
Max
6.0
V
CC
+ 125
1000
500
400
Unit
V
V
_C
ns
ORDERING INFORMATION
Device
74HC04DR2G
74HC04DTR2G
Package
SOIC−14
(Pb−Free)
TSSOP−14*
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
74HC04
DC CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
V
IH
Parameter
Minimum High−Level Input
Voltage
Condition
V
out
= 0.1V or V
CC
−0.1V
|I
out
|
≤
20mA
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
≤
2.4mA
|I
out
|
≤
4.0mA
|I
out
|
≤
5.2mA
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
≤
2.4mA
|I
out
|
≤
4.0mA
|I
out
|
≤
5.2mA
3.0
4.5
6.0
6.0
6.0
Guaranteed Limit
−55
to 25°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
±0.1
2.0
≤85°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
±1.0
20
≤125°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.20
3.70
5.20
0.1
0.1
0.1
0.40
0.40
0.40
±1.0
40
mA
mA
V
Unit
V
V
IL
Maximum Low−Level Input
Voltage
V
out
= 0.1V or V
CC
−
0.1V
|I
out
|
≤
20mA
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
|
≤
20mA
V
in
=V
IH
or V
IL
V
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
|
≤
20mA
V
in
= V
IH
or V
IL
I
in
I
CC
Maximum Input Leakage
Current
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
V
in
= V
CC
or GND
I
out
= 0mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS
(C
L
= 50pF, Input t
r
= t
f
= 6ns)
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
Guaranteed Limit
−55
to 25°C
75
30
15
13
75
27
15
13
10
≤85°C
95
40
19
16
95
32
19
16
10
≤125°C
110
55
22
19
110
36
22
19
10
Unit
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
ns
C
in
Maximum Input Capacitance
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Per Inverter)*
20
pF
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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3
74HC04
t
f
INPUT A
90%
50%
10%
t
PLH
90%
OUTPUT Y
t
TLH
50%
10%
t
THL
t
PHL
t
r
V
CC
GND
Figure 1. Switching Waveforms
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
C
L
*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
A
Y
Figure 3. Expanded Logic Diagram
(1/6 of the Device Shown)
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4
74HC04
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
−A−
14
8
−B−
P
7 PL
0.25 (0.010)
M
B
M
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
G
C
−T−
SEATING
PLANE
R
X 45
_
F
D
14 PL
0.25 (0.010)
K
M
M
S
J
T B
A
S
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
_
7
_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0
_
7
_
0.228 0.244
0.010 0.019
SOLDERING FOOTPRINT*
7X
7.04
1
0.58
14X
14X
1.52
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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