Si4354DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.0165 at V
GS
= 10 V
0.0185 at V
GS
= 4.5 V
I
D
(A)
9.5
9.0
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Gen II Power MOSFET
• 100 % R
g
Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
SO-8
S
S
S
G
1
2
3
4
Top View
S
Ordering Information:
Si4354DY-T1-E3 (Lead (Pb)-free)
Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
± 12
9.5
7.5
40
2.2
2.5
1.6
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
a
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Foot (Drain)
Notes:
a. t
≤
10 s.
b. Surface Mounted on 1" x 1" FR4 board.
Symbol
R
thJA
R
thJF
Typical
43
19
Maximum
50
25
Unit
°C/W
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
www.vishay.com
1
Si4354DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.2 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.45
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 9.5 A
7
1.85
1.20
0.9
8
10
28
9
35
1.35
13
15
45
15
55
ns
Ω
10.5
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.5 A
V
GS
= 4.5 V, I
D
= 9.0 A
V
DS
= 15 V, I
D
= 9.5 A
I
S
= 2.2 A, V
GS
= 0 V
30
0.0135
0.0154
40
0.75
1.1
0.0165
0.0185
0.7
1.6
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 thru 3 V
40
30
40
35
I
D
- Drain Current (A)
I
D
- Drain Current (A)
30
25
20
15
10
5
T
C
= 125 °C
25 °C
- 55 °C
20
10
2V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
Si4354DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.025
1300
R
DS(on)
- On-Resistance (
Ω)
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
Capacitance (pF)
0.020
1040
C
iss
780
520
C
oss
260
C
rss
0
0.005
0.000
0
5
10
I
D
15
20
25
30
35
40
C
-
0
5
V
DS
10
15
20
25
30
-
Drain Current (A)
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9.5 A
1.4
R
DS(on)
- On-Resistance
1.6
V
GS
= 10 V
I
D
= 9.5 A
Capacitance
5
4
(Normalized)
1.2
3
1.0
V
GS
-
2
1
0.8
0
0
2
Q
g
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
-
Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
0.05
On-Resistance vs. Junction Temperature
40
T
J
= 150 °C
I
S
- Source Current (A)
10
R
DS(on)
- On-Resistance (
Ω)
0.04
0.03
I
D
= 9.5 A
T
J
= 25 °C
1
0.02
0.01
0.1
0.0
0.00
0.2
V
SD
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-
Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
www.vishay.com
3
Si4354DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
30
0.2
I
D
= 250 µA
V
GS(th)
Variance (V)
0.0
Power (W)
24
18
- 0.2
12
- 0.4
6
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10-
2
10-
1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
I
DM
Limited
10
I
D
- Drain Current (A)
1 ms
1
I
D(on)
Limited
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1s
10 s
dc
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 71 °C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
Si4354DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-
4
10
-
3
10
-
2
10
-
1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72967.
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
www.vishay.com
5
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