NLU1G07
Single Non-Inverting Buffer
with Open Drain Output
The NLU1G07 MiniGatet is an advanced high−speed CMOS
non−inverting buffer with open drain output in ultra−small footprint.
The NLU1G07 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
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MARKING
DIAGRAMS
UDFN6
MU SUFFIX
CASE 517AA
UDFN6
1.0 x 1.0
CASE 517BX
1
UDFN6
1.45 x 1.0
CASE 517AQ
1
5
NC
J
M
= Device Marking
= Date Code
XM
JM
•
•
•
•
•
•
•
High Speed: t
PD
= 3.8 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
1
XM
NC
1
OVT
6
V
CC
IN A
2
GND
3
4
OUT Y
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. Pinout
(Top View)
IN A
1
OUT Y
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
2
3
4
5
6
NC
IN A
GND
OUT Y
NC
V
CC
FUNCTION TABLE
A
L
H
Y
L
Z
©
Semiconductor Components Industries, LLC, 2016
August, 2016
−
Rev. 4
1
Publication Order Number:
NLU1G07/D
NLU1G07
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5
to +7.0
−0.5
to +7.0
−0.5
to +7.0
−20
±20
±12.5
±25
±25
−65
to +150
260
150
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5)
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Min
1.65
0
0
−55
0
0
Max
5.5
5.5
5.5
+125
100
20
Unit
V
V
V
°C
ns/V
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2
NLU1G07
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
1.65
2.3 to
5.5
V
IL
Low−Level Input
Voltage
1.65
2.3 to
5.5
V
OL
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
LKG
I
IN
I
OFF
I
CC
Z−State Output
Leakage Current
Input Leakage
Current
Power off Input
Leakage Current
Quiescent Supply
Current
V
IN
= V
IH
, V
OUT
= V
CC
or GND
0 = V
IN
= 5.5 V
0
v
V
IN
,
V
OUT
= 5.5 V
0
v
V
IN
v
V
CC
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
0.0
5.5
0
0
0
T
A
= 25
5C
Min
0.75 x
V
CC
0.70 x
V
CC
0.25 x
V
CC
0.30 x
V
CC
0.1
0.1
0.1
0.36
0.36
±0.25
±0.1
0.25
1.0
Typ
Max
T
A
=
+855C
Min
0.75 x
V
CC
0.70 x
V
CC
0.25 x
V
CC
0.30 x
V
CC
0.1
0.1
0.1
0.44
0.44
±2.5
±1.0
2.5
20
0.25 x
V
CC
0.30 x
V
CC
0.1
0.1
0.1
0.52
0.52
±5.0
±1.0
5
40
mA
mA
mA
mA
V
V
Max
T
A
=
−555C
to +1255C
Min
Max
Unit
V
Symbol
V
IH
Parameter
Low−Level Input
Voltage
Conditions
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
V
CC
(V)
3.0 to
3.6
T
A
= 25
5C
Test Condition
R
L
= R
1
= 50
W,
C
L
= 15 pF
R
L
= R
1
= 50
W,
C
L
= 50 pF
4.5 to
5.5
R
L
= R
1
= 50
W,
C
L
= 15 pF
R
L
= R
1
= 50
W,
C
L
= 50 pF
t
PLZ
Output Disable
Time
3.0 to
3.6
4.5 to
5.5
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(Note 6)
5.0
R
L
= R
1
= 50
W,
C
L
= 50 pF
R
L
= R
1
= 50
W,
C
L
= 50 pF
Min
Typ
5.0
7.5
3.8
5.3
7.5
5.3
4
18
Max
7.1
10.6
5.5
7.5
10.6
7.5
10
T
A
=
+855C
Min
Max
8.5
12.0
6.5
8.5
12.0
8.5
10
T
A
=
−555C
to +1255C
Min
Max
10.0
14.5
8.0
10.0
14.5
10.0
10.0
pF
pF
ns
Unit
ns
Symbol
t
PZL
Parameter
Output Enable
Time, Input A to
Output Y
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
•
V
CC
•
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
•
V
CC2
•
f
in
+ I
CC
•
V
CC.
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3
NLU1G07
V
CC
A
50%
t
PZL
Y
50% V
CC
t
PLZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
)
0.3 V
*Includes jig and probe capacitance.
R
L
= R
1
= 500
W
A
C
L
*
R
L
2
R
1
Figure 3. Switching Waveforms
Figure 4. Test Circuit
V
CC
OVT
1.5 V to 7 V
R
L
A
Figure 5. Output Voltage Mismatch Application
ORDERING INFORMATION
Device
NLU1G07MUTCG
NLU1G07AMUTCG
NLU1G07CMUTCG
Package
UDFN6, 1.2 x 1.0, 0.4P
(Pb−Free)
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
UDFN6, 1.0 x 1.0, 0.35P
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NLU1G07
PACKAGE DIMENSIONS
UDFN6 1.45x1.0, 0.5P
CASE 517AQ
ISSUE O
D
A
B
L1
PIN ONE
REFERENCE
L
L
E
OPTIONAL
CONSTRUCTIONS
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
DIM
A
A1
A2
b
D
E
e
L
L1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.07 REF
0.20
0.30
1.45 BSC
1.00 BSC
0.50 BSC
0.30
0.40
−−−
0.15
0.10 C
DETAIL B
0.05 C
6X
A
A1
SIDE VIEW
e
1
3
OPTIONAL
CONSTRUCTIONS
0.05 C
A2
C
SEATING
PLANE
6X
L
DETAIL A
6
4
6X
b
0.10 C A B
0.05 C
NOTE 3
BOTTOM VIEW
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5
ÉÉ
ÉÉ
ÉÉ
0.10 C
ÉÉÉ
ÉÉÉ
TOP VIEW
EXPOSED Cu
MOLD CMPD
DETAIL B
MOUNTING FOOTPRINT
PACKAGE
OUTLINE
0.30
6X
1.24
0.53
6X
1
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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