74V2G04
TRIPLE INVERTER
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.8ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
= 25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUT
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-8L
ORDER CODES
PACKAGE
SOT23-8L
74V2G04STR
DESCRIPTION
The 74V2G04 is an advanced high-speed CMOS
TRIPLE INVERTER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
et
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P
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od
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s)
t(
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T&R
June 2003
1/7
74V2G04
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1, 3, 6
7, 5, 2
4
8
SYMBOL
1A, 2A, 3A
1Y, 2Y, 3Y
GND
V
CC
NAME QND FUNCTION
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Y
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
Supply Voltage
Input Voltage
Output Voltage
1) V
IN
from 30% to 70% of V
CC
O
so
b
dt/dv
te
le
Operating Temperature
Input Rise and Fall Time (note 1) (V
CC
= 3.3
±
0.3V)
(V
CC
= 5.0
±
0.5V)
r
P
uc
od
Parameter
s)
t(
so
b
-O
et
l
P
e
od
r
±
20
±
25
±
50
260
s)
t(
uc
Unit
V
V
V
mA
mA
mA
mA
°C
°C
-65 to +150
Value
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
0 to 20
Unit
V
V
V
°C
ns/V
ns/V
2/7
74V2G04
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
0 to
5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
2.0
3.0
4.5
1.9
2.9
4.4
2.48
3.8
0.1
0.1
0.44
0.44
±
1
10
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.4
V
Max.
-55 to 125°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
V
V
Max.
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
OH
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
C
L
(pF)
15
50
15
50
t
PLH
t
PHL
Propagation Delay
Time
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
CAPACITIVE CHARACTERISTICS
O
so
b
Symbol
C
IN
C
PD
te
le
r
P
uc
od
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
s)
t(
so
b
-O
Min.
5.0
6.1
3.8
4.7
te
le
±
0.1
1
Max.
7.0
9.0
5.5
7.5
r
P
od
0.1
s)
t(
uc
3.7
0.1
0.1
0.1
0.55
0.55
±
1
20
V
µA
µA
Value
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
Max.
8.5
10.5
6.5
8.5
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
Max.
9.5
11.5
7.5
9.5
ns
Unit
T
A
= 25°C
Typ.
Test Condition
Parameter
Min.
Input Capacitance
Power Dissipation
Capacitance
(note 1)
T
A
= 25°C
Typ.
4
10
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/3
3/7
74V2G04
TEST CIRCUIT
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY
(f=1MHz; 50% duty cycle)
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
4/7
stm32/stm8
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