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1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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for additional data sheets and product information.
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MA4SW410B-1
HMIC™ Silicon SP4T PIN Diode Switch
with Integrated Bias Network
Rev. V4
Electrical Specifications: T
A
= +25°C, 10 mA (On-Wafer Measurements)
Parameter
Insertion Loss
Test Conditions
6 GHz
12 GHz
18 GHz
6 GHz
12 GHz
18 GHz
6 GHz
12 GHz
18 GHz
10 GHz
Units
dB
Min.
—
40
35
30
—
—
Typ.
0.8
1.0
1.4
50
40
35
10
15
10
80
Max.
1.0
1.2
1.6
—
Isolation
dB
Input Return Loss
Switching Speed
1
dB
ns
—
—
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I
C
= C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
Absolute Maximum Ratings
2,3,4
Parameter
RF CW Incident Power
Reverse Voltage
Bias Current per Port
Junction Temperature
Operating Temperature
Storage Temperature
Absolute Maximum
+33 dBm
-25 V
±50 mA @ +25°C
+175°C
-65°C to +125°C
-65°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SW410B-1
HMIC™ Silicon SP4T PIN Diode Switch
with Integrated Bias Network
Rev. V4
Typical RF Performance @ T
AMB
= +25°C (Probed on Wafer)
MA4SW410B-1 Typical Isolation
0
-5
- 10
- 15
- 20
- 25
- 30
dB
- 35
- 40
- 45
- 50
- 55
- 60
- 65
- 70
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
J1to J2
J1to J3
J1to J4
J1to J5
MA4SW410B-1 Typical Return Loss
0
-5
- 10
dB
- 15
- 20
- 25
- 30
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Input RL
J2 RL
J3 RL
J4 RL
J5 RL
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SW410B-1
HMIC™ Silicon SP4T PIN Diode Switch
with Integrated Bias Network
Operation of the MA4SW410B-1 PIN Switch
Operation of the HMIC Series of PIN switches is achieved by the simultaneous application of negative DC current
to the low loss port and positive DC current to the remaining isolated switching ports per the Driver Connections
table below. The control currents should be supplied by constant current sources. For insertion loss, -10 mA bias
results in approximately -2 V, and for Isolation,+10 mA yields approximately +0.9 V at the respective bias nodes.
The backside area of the die is the RF and DC return ground plane.
Rev. V4
Typical Bias Network
J1
DC Bias
J2
J5
J3
J4
Typical Driver Connections
DC Control Current (mA)
B2
-10
+10
+10
+10
B3
+10
-10
+10
+10
B4
+10
+10
-10
+10
B5
+10
+10
+10
-10
J1-J2
low loss
Isolation
Isolation
Isolation
RF Output States
J1-J3
Isolation
low loss
Isolation
Isolation
J1-J4
Isolation
Isolation
low loss
Isolation
J1-J5
Isolation
Isolation
Isolation
low loss
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4SW410B-1
HMIC™ Silicon SP4T PIN Diode Switch
with Integrated Bias Network
Chip Dimensions
5,6
I
H
I
Rev. V4
G
F
F
A
E
D
E
D
C
B
5. Topside and backside metallization is gold, 2.5 µm thick typical.
6. Yellow areas indicate wire bonding pads.
C
DIM
Min.
A
B
C
D
E
F
G
H
I
RF Bond Pads (J1 - J5)
DC Bond Pads (B2 - B5)
Chip Thickness
5
Mils
Max.
90.0
110.0
50.5
9.0
26.0
26.0
20.0
48.5
26.5
7.0 x 5.0 ref.
5.0 x 5.0 ref.
5.0 ref.
Min.
2.18
2.69
1.26
0.20
0.64
0.64
0.48
1.21
0.65
Millimeters
Max.
2.29
2.79
1.28
0.23
0.66
0.66
0.51
1.23
0.67
0.178 x 0.127 ref.
0.127 x 0.127 ref.
0.127 ref.
86.0
106.0
49.5
8.0
25.0
25.0
19.0
47.5
25.5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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