VS-ST203C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
A-PUK (TO-200AB)
Single SCR
370 A
1000 V, 1200 V
1.72 V
5260 A
5510 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
370
55
700
25
5260
5510
138
126
1000 to 1200
20 to 30
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1100
1300
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
40
VS-ST203C..C
Revision: 12-Sep-17
Document Number: 94370
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST203C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
860
840
700
430
50
V
DRM
50
40
47/0.22
750
706
580
340
1340
1400
1350
980
50
V
DRM
-
1160
1220
1170
830
5620
2940
1750
910
50
V
DRM
-
5020
2590
1520
780
V
A/μs
55
47/0.22
°C
μF
A
55
40
47/0.22
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
370 (140)
55 (85)
700
5260
5510
4420
Sinusoidal half wave,
initial T
J
= T
J
maximum
4630
138
126
98
89
1380
1.72
1.17
1.22
0.92
0.83
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: See table in device code
VALUES
1000
0.8
20
30
μs
UNITS
A/μs
Revision: 12-Sep-17
Document Number: 94370
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST203C Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/μs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d % = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.17
0.08
0.033
0.017
4900
(500)
50
N
(kg)
g
K/W
UNITS
°C
A-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.015
0.018
0.024
0.035
0.060
DOUBLE SIDE
0.017
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 12-Sep-17
Document Number: 94370
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST203C Series
www.vishay.com
Vishay Semiconductors
130
ST203C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
130
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
0
50
100
30°
ST203C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
120
110
100
90
80
70
60
50
40
30
20
250
0
30°
100
60°
90°
300
Ø
Conduction angle
Ø
Conduction period
180°
60°
90° 120°
150
200
DC
120°
400
180°
500
600
700
800
200
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
130
1000
110
100
90
80
70
60
50
40
30
20
0
50
100
150
30°
60°
Maximum Average On-State
Power Loss (W)
120
Maximum Allowable
Heatsink Temperature (°C)
ST203C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
900
800
700
600
500
400
300
200
100
0
0
50
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
Ø
DC
90°
120°
200
250
180°
300
350
400
Conduction angle
ST203C..C Series
T
J
= 125 °C
100 150 200 250 300 350 400 450
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
130
1400
Maximum Average On-State
Power Loss (W)
120
Maximum Allowable
Heatsink Temperature (°C)
110
100
90
80
70
60
50
40
30
20
0
100
200
30°
60°
ST203C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
1200
1000
800
600
400
200
0
Ø
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
Conduction period
ST203C..C Series
T
J
= 125 °C
0
100
200
300
400
500
600
700
800
180°
90°
300
120°
400
500
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 12-Sep-17
Document Number: 94370
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST203C Series
www.vishay.com
Vishay Semiconductors
1
ST203C..C Series
5000
4500
Peak Half Sine Wave
On-State Current (A)
4000
3500
3000
2500
ST203C..C Series
2000
1
10
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Z
thJ-hs
- Transient Thermal
Impedance (K/W)
At any rated load condition and with
rated V
RRM
applied following surge
0.1
0.01
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
0.1
1
10
100
0.001
0.001
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
5000
Peak Half Sine Wave
On-State Current (A)
4500
4000
3500
3000
2500
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Q
rr
- Maximum Reverse Recovery Charge
(µC)
5500
250
ST203C..C Series
T
J
= 125 °C
200
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
150
100
I
TM
= 100 A
50
I
TM
= 50 A
ST203C..C Series
2000
0.01
0
0
20
40
60
80
100
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
160
I
rr
- Maximum Reverse Recovery
Current (A)
140
120
100
80
60
40
20
0
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
ST203C..C Series
1000
T
J
= 25 °C
T
J
= 125 °C
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ST203C..C Series
T
J
= 125 °C
0
20
40
60
80
100
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 12-Sep-17
Document Number: 94370
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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