VS-15MQ040NTRPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 1.5 A
FEATURES
•
•
•
•
Surface mountable
Extremely low forward voltage
Compact size
Improved reverse blocking voltage capability relative to
other similar size Schottky
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Switching power supplies
Meter protection
Reverse protection for power input to PC board circuits
Battery isolation and charging
Low threshold voltage diode
Freewheeling or by-pass diode
Low voltage clamp
Cathode
Anode
SMA
(DO-214AC)
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
SMA (DO-214AC)
1.5 A
40 V
0.43 V
20 mA at 125 °C
150 °C
Single
6.0 mJ
•
•
•
•
•
•
•
DESCRIPTION
The VS-15MQ040NTRPbF Schottky rectifier is designed to
be used for low power applications where a reverse voltage
of 40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
2 A
pk
, T
J
= 125 °C
Range
Rectangular waveform
CHARACTERISTICS
VALUES
1.5
40
330
0.43
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-15MQ040NTRPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
L
= 105 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
50 % duty cycle at T
L
= 114 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
2.1
A
1.5
330
140
6.0
1.0
A
mJ
A
UNITS
Revision: 17-May-17
Document Number: 94141
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15MQ040NTRPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
1A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.42
0.49
0.34
0.43
0.5
20
0.26
64.6
134
2.0
10 000
mA
V
mΩ
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
V
FM (1)
2A
1A
2A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJA
DC operation
TEST CONDITIONS
VALUES
-40 to +150
80
0.07
0.002
UNITS
°C
°C/W
g
oz.
XF
Case style SMA (DO-214AC) (similar D-64)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 17-May-17
Document Number: 94141
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15MQ040NTRPbF
www.vishay.com
Vishay Semiconductors
150
I
F
- Instantaneous Forward Current (A)
Allowable Case Temperature (°C)
10
140
130
120
110
100
90
80
70
60
50
40
30
0
See note (1)
0.5
1.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Square wave (D = 0.50)
80 % rated V
R
applied
1.5
2.0
2.5
3.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.6
100
T
J
= 150 °C
I
R
- Reverse Current (mA)
Average Power Loss (W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
1
RMS limit
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
0.001
0
5
10
15
20
25
30
35
40
0
0.5
1.0
1.5
2.0
2.5
3.0
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
5
10
15
20
25
30
35
40
45
100
10
100
1000
10 000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
(1)
Revision: 17-May-17
Document Number: 94141
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15MQ040NTRPbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
15
2
M
3
Q
4
040
5
N
6
TR
7
PbF
8
Vishay Semiconductors products
Current rating (15 = 1.5 A)
M = SMA
Q = Schottky “Q” series
Voltage rating (040 = 40 V)
N = new SMA
TR = tape and reel
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-15MQ040NTRPbF
PREFERRED PACKAGE CODE
5AT
MINIMUM ORDER QUANTITY
7500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95400
www.vishay.com/doc?95403
www.vishay.com/doc?95404
www.vishay.com/doc?95273
Revision: 17-May-17
Document Number: 94141
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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