VS-25F(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 25 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
RRM
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-4 (DO-203AA)
TYPICAL APPLICATIONS
• Battery charges
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
25 A
DO-4 (DO-203AA)
Single
• Converters
• Power supplies
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
25
120
40
356
373
636
580
100 to 1200
-65 to +175
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-25F(R)
60
80
100
120
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
150
275
500
725
950
1200
1400
12
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
Revision: 11-Jan-18
Document Number: 93506
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25F(R) Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
25
120
40
356
373
300
Sinusoidal half wave,
initial T
J
= T
J
maximum
314
636
580
450
410
6360
0.80
0.90
6.80
m
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 78 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
5.70
1.30
V
A
2
s
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature
range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Allowable mounting torque
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-65 to +175
°C
-65 to +200
1.5
K/W
0.5
1.5 + 0 - 10 %
(13)
1.2 + 0 - 10 %
(10)
7
0.25
N·m
(lbf · in)
N·m
(lbf · in)
g
oz.
UNITS
DO-4 (DO-203AA)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.28
0.39
0.50
0.73
1.20
RECTANGULAR CONDUCTION
0.24
0.41
0.54
0.75
1.21
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93506
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25F(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
180
170
160
150
Conduction Period
Maximum Allowable Case Temperature (°C)
180
170
160
150
Conduction Angle
25F(R) Series
R
thJC
(DC) = 1.5 K/W
25F(R) Series
R
thJC
(DC) = 1.5 K/W
140
130
120
110
30°
100
0
5
10
15
20
25
30
Average Forward Current (A)
60°
90°
120°
180°
140
130
120
110
100
0
5
10 15 20 25 30 35 40 45
Average Forward Current (A)
30°
90°
60°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
35
30
25
20
15
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
R
th
K/
W
4K
/W
3
2
W
K/
SA
=1
W
K/
aR
elt
-D
6K
/W
8K
/W
12 K
/W
10
5
0
0
5
10
15
20
25
25F(R) Series
T = 175°C
J
20 K/
W
40 K/W
30
0
25
50
75
100
125
150
175
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
25
DC
180°
120°
90°
60°
30°
R
20
6K
/W
th
SA
=
RMS Limit
8K
/W
10 K
/W
4K
/W
-D
elt
aR
15
10
Conduction Period
15 K/
W
20 K/W
5
30 K/W
16F(R) Series
T = 175°C
J
0
5
10
15
20
25
30
0
25
50
75
100
0
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93506
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25F(R) Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
350
300
250
200
150
100
50
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 175°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
100
T = 25°C
J
T = 175°C
J
10
25F(R) Series
25F(R) Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Peak Half Sine Wave Forward Current (A)
Transient Thermal Impedance Z
thJC
(K/W)
400
350
300
250
200
150
100
50
0
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 175°C
No Voltage Reapplied
Rated V
RRM
Reapplied
10
Steady State Value
RthJC = 1.5 K/W
(DC Operation)
1
25F(R) Series
25F(R) Series
0.1
0.001
0.1
1
10
0.01
0.1
1
10
Pulse Train Duration (s)
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
25
2
F
3
R
4
120
5
M
6
Vishay Semiconductors product
Current rating: code = I
F(AV)
F = standard device
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = stud base DO-4 (DO-203AA) 10-32UNF-2A
M = stud base DO-4 (DO-203AA) M5 X 0.8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 11-Jan-18
Document Number: 93506
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS
in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
0.8 ± 0.1
(0.03 ± 0.004)
+ 0.3
0
+ 0.01
(0.08
0
)
2
5.50 (0.22) MIN.
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
10.20 (0.40)
MAX.
3.50 (0.14)
R 0.40
R (0.02)
Ø 6.8 (0.27)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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