A Business Partner of Renesas Electronics Corporation.
Preliminary
μ
PA862TD
NPN Silicon RF Twin Transistor (with 2 Different Elements)
in a 6-pin Lead-less Minimold
FEATURES
<R>
• Low voltage operation
Data Sheet
R09DS0032EJ0200
Rev.2.00
Dec 19, 2011
• 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
f
T
= 12.0 GHz TYP.,
⏐S
21e
⏐
2
= 8.5 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
f
T
= 4.5 GHz TYP.,
⏐S
21e
⏐
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1
<R>
<R>
3-pin thin-type ultra super minimold part No.
2SC5010
ORDERING INFORMATION
Part Number
μ
PA862TD
μ
PA862TD-T3
Order Number
μ
PA862TD-A
μ
PA862TD-T3-A
Quantity
50 pcs (Non reel)
10 kpcs/reel
IN
Package
NT
(1208) (Pb-Free)
6-pin lead -less minimold
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
DI
SC
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
O
Page 1 of 18
UE
Q2
2SC5801
Q2: Built-in low phase distortion transistor suited for OSC operation
• 8 mm wide embossed taping
the perforation side of the tape
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face
D
Supplying Form
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
Q1
9
6
2
30
180
150
−65
to +150
Q2
9
5.5
1.5
100
190
Unit
V
V
V
210 in 2 elements
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
DI
R 0 9 D S 0 0 3 2 E J 0 2 0 0 R e v. 2 . 0 0
Dec 19, 2011
SC
O
P a ge 2 of 1 8
NT
IN
UE
D
mA
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0
V
BE
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
MIN.
−
−
75
10.0
7.0
−
−
TYP.
−
−
110
12.0
8.5
MAX.
100
100
150
−
−
Unit
nA
nA
−
GHz
dB
⏐S
21e
⏐
NF
C
re
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 3 V, I
E
= 0, f = 1 MHz
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0
V
BE
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 5 mA
UE
MIN.
−
−
Note 2
100
3.0
f
T
f
T
⏐S
21e
⏐
⏐S
21e
⏐
NF
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
IN
5.0
3.0
4.5
−
−
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
2
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
NT
C
re
Note 2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0, f = 1 MHz
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
Rank
Marking
h
FE
Value of Q1
h
FE
Value of Q2
FB/YFB
vY
DI
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
SC
75 to 150
100 to 145
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Page 3 of 18
h
FE
CLASSIFICATION
D
1.5
2.5
dB
pF
0.4
0.7
f
T
TYP.
−
−
MAX.
600
600
Unit
nA
nA
−
120
4.5
6.5
4.0
5.5
1.9
0.6
145
−
−
−
−
2.5
0.8
GHz
GHz
dB
dB
dB
pF
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
300
Total Power Dissipation P
tot
(mW)
250
200
190
180
210
150
100
50
0
Q2
Q1
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Q1
Reverse Transfer Capacitance C
re
(pF)
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
0.5
0.4
0.3
0.2
0.1
IN
1.0
0.8
0.6
0.4
0.2
0
2
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
NT
6
8
10
UE
Q2
4
6
8
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Collector to Base Voltage V
CB
(V)
Remark
The
graphs
indicate nominal characteristics.
DI
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
SC
O
0
2
4
D
10
Page 4 of 18
A Business Partner of Renesas Electronics Corporation.
μ
PA862TD
Q1
Q2
100
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current I
C
(mA)
100
10
1
0.1
0.01
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
10
1
0.1
0.01
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
UE
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage V
BE
(V)
100
10
1
V
CE
= 2 V
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage V
BE
(V)
0.001
0.001
Base to Emitter Voltage V
BE
(V)
V
CE
= 2 V
Collector Current I
C
(mA)
1
0.1
0.01
0.001
0.5
0.6
0.0001
0.4
0.7
NT
0.8
0.9
1.0
0.0001
0.4
0.8
0.9
1.0
Collector Current I
C
(mA)
10
IN
1.0
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
DI
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
SC
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
Base to Emitter Voltage V
BE
(V)
Remark
The graphs indicate nominal characteristics.
O
Base to Emitter Voltage V
BE
(V)
0.6
0.7
D
1.0
Page 5 of 18
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