IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
38
4.7
21
Single
D
FEATURES
900
8.0
•
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBF20S, SiHFBF20S)
• Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
• Available in Tape and Reel (IRFBF20S, SiHFBF20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capabel of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L, SiHFBF20L) is available for
low-profile applications.
D
2
PAK (TO-263)
SiHFBF20STRL-GE3
a
IRFBF20STRLPbF
a
SiHFBF20STL-E3
a
D
2
PAK (TO-263)
SiHFBF20STRR-GE3
a
IRFBF20STRRPbF
a
SiHFBF20STR-E3
a
I
2
PAK (TO-262)
SiHFBF20L-GE3
IRFBF20LPbF
SiHFBF20L-E3
DESCRIPTION
I
2
PAK (TO-262)
D
2
PAK (TO-263)
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFBF20S-GE3
IRFBF20SPbF
SiHFBF20S-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
e
Gate-Source Voltage
e
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Current
a,e
Energy
b, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
LIMIT
900
± 20
1.7
1.1
6.8
0.43
180
1.7
5.4
54
3.1
1.5
- 55 to + 150
300
d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
Single Pulse Avalanche
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V; starting T
J
= 25 °C, L = 117 mH, R
g
= 25
,
I
AS
= 1.7 A (see fig. 12).
c. I
SD
1.7 A, dI/dt
70 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBF20, SiHFBF20 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
Maximum Junction-to-Case
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
2.3
UNIT
°C/W
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 450 V, I
D
= 1.7 A,
R
g
= 18
,
V
GS
= 10 V, see fig. 10
b
V
GS
= 10 V
I
D
= 1.7 A, V
DS
= 360 V,
see fig. 6 and 13
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
-
-
-
-
-
-
490
55
18
-
-
-
8.0
21
56
32
-
-
-
38
4.7
21
-
-
-
-
ns
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 900 V, V
GS
= 0 V
V
DS
= 720 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 1.0 A
b
V
DS
= 50 V, I
D
= 1.0 A
b
900
-
2.0
-
-
-
-
0.6
-
1.1
-
-
-
-
-
-
-
-
4.0
± 100
100
500
8.0
-
V
mV/°C
V
nA
μA
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
www.vishay.com
2
Document Number: 91121
S11-1053-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
-
-
-
350
0.85
1.7
A
6.8
1.5
530
1.3
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 1.7 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 1.7 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. Uses IRFBF20/SiHFBF20 data and test conditions.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91121
S11-1053-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
V
DS
V
GS
R
g
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
Fig. 8 - Maximum Safe Operating Area
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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