EEPROM 2.5-5.5V 8K (1Kx8)
| 参数名称 | 属性值 |
| Brand Name | STMicroelectronics |
| 厂商名称 | ST(意法半导体) |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP8,.25 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 13 weeks |
| Samacsys Description | STMicroelectronics M24C08-WMN6P EEPROM Memory, 8kbit, 900ns, 2.5 → 5.5 V 8-Pin SOIC |
| 最大时钟频率 (fCLK) | 0.4 MHz |
| 数据保留时间-最小值 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DMMR |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e4 |
| 长度 | 4.9 mm |
| 内存密度 | 8192 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 1024 words |
| 字数代码 | 1000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 1KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 3/5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.75 mm |
| 串行总线类型 | I2C |
| 最大待机电流 | 0.000001 A |
| 最大压摆率 | 0.002 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 2.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 宽度 | 3.9 mm |
| 最长写入周期时间 (tWC) | 5 ms |
| 写保护 | HARDWARE |
| M24C08-WMN6P | M24C08-FMC5TG | M24C08-RMN6P | M24C08-FMC6TG | M24C08-RMC6TG | M24C08-WBN6P | |
|---|---|---|---|---|---|---|
| 描述 | EEPROM 2.5-5.5V 8K (1Kx8) | EEPROM 8Kbit 100kHz I2C 400 kHZ Fast-Mode | EEPROM 16Kbit 8Kbit 4Kbit 2Kb and 1Kb Serial | EEPROM 8 Kbit serial I2C Bus EEPROM | EEPROM 8Kbit 100kHz I2C 400 kHZ Fast-Mode | EEPROM 2.5-5.5V 8K (1Kx8) |
| Brand Name | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| 包装说明 | SOP, SOP8,.25 | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 | SOP-8 | HVSON, | HVSON, SOLCC8,.11,20 | DIP-8 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大时钟频率 (fCLK) | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-N8 | R-PDSO-G8 | R-PDSO-N8 | R-PDSO-N8 | R-PDIP-T8 |
| JESD-609代码 | e4 | e4 | e4 | e4 | e4 | e3 |
| 长度 | 4.9 mm | 3 mm | 4.9 mm | 3 mm | 3 mm | 9.27 mm |
| 内存密度 | 8192 bit | 8192 bit | 8192 bit | 8192 bit | 8192 bit | 8192 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words |
| 字数代码 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -20 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 1KX8 | 1KX8 | 1KX8 | 1KX8 | 1KX8 | 1KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | HVSON | SOP | HVSON | HVSON | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | IN-LINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 座面最大高度 | 1.75 mm | 0.6 mm | 1.75 mm | 0.6 mm | 0.6 mm | 5.33 mm |
| 串行总线类型 | I2C | I2C | I2C | I2C | I2C | I2C |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 2.5 V | 1.7 V | 1.8 V | 1.7 V | 1.8 V | 2.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 1.8 V | 2.5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | OTHER | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) - annealed |
| 端子形式 | GULL WING | NO LEAD | GULL WING | NO LEAD | NO LEAD | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 0.5 mm | 1.27 mm | 0.5 mm | 0.5 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 3.9 mm | 2 mm | 3.9 mm | 2 mm | 2 mm | 7.62 mm |
| 最长写入周期时间 (tWC) | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms |
| 厂商名称 | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | - | - | ST(意法半导体) |
| 零件包装代码 | SOIC | DFP | SOIC | - | SOIC | DIP |
| 针数 | 8 | 8 | 8 | - | 8 | 8 |
| Factory Lead Time | 13 weeks | 12 weeks | 16 weeks | 12 weeks | 26 weeks | - |
| 数据保留时间-最小值 | 40 | 40 | 40 | - | 40 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DMMR | 1010DMMR | 1010DMMR | - | 1010DMMR | 1010DMMR |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | - |
| 封装等效代码 | SOP8,.25 | SOLCC8,.11,20 | SOP8,.25 | - | SOLCC8,.11,20 | DIP8,.3 |
| 电源 | 3/5 V | 1.8/5 V | 2/5 V | - | 1.8/5 V | 3/5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 最大待机电流 | 0.000001 A | 0.000001 A | 0.000001 A | - | 0.000001 A | 0.000001 A |
| 最大压摆率 | 0.002 mA | 0.0008 mA | 0.0008 mA | - | 0.0008 mA | 0.002 mA |
| 写保护 | HARDWARE | HARDWARE | HARDWARE | - | HARDWARE | HARDWARE |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | 符合 | 符合 |
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