StrongIRFET™
IRL40B209
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
40V
1.0m
1.25m
414A
195A
G
S
I
D (Package Limited)
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
S
D
G
TO-220AB
IRL40B209
G
Gate
D
Drain
S
Source
Base part number
IRL40B209
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL40B209
RDS(on), Drain-to -Source On Resistance (m
)
6
ID = 100A
5
4
3
2
1
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
T J = 125°C
450
400
350
ID, Drain Current (A)
Limited By Package
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Max.
414
293
195
1707
375
2.5
± 20
IRL40B209
Units
A
W
W/°C
V
°C
-55 to + 175
Storage Temperature Range
T
STG
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
E
AS (Thermally limited)
730
Single Pulse Avalanche Energy
1420
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.4
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
mJ
A
mJ
Units
°C/W
Min. Typ. Max.
40
––– –––
––– 0.031 –––
–––
1.0 1.25
–––
1.2
1.6
1.0 –––
2.4
––– –––
1.0
––– ––– 150
––– ––– 100
––– ––– -100
–––
2.1
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 100A
m
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
=40 V, V
GS
= 0V
µA
V
DS
=40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited
by T
Jmax
, starting T
J
= 25°C, L = 0.15mH,R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
930A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 53A, V
GS
=10V.
Pulse drain current is limited at 780A by source bonding technology.
2
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May 18, 2015
IRL40B209
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
180
51
88
92
56
198
188
150
15140
1990
1370
2340
2900
Typ.
–––
–––
–––
2.4
41
42
46
50
2.0
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=100A
270
I
D
= 100A
V
DS
= 20V
–––
nC
V
GS
= 4.5V
–––
–––
–––
V
DD
= 20V
–––
I
D
= 30A
ns
–––
R
G
= 2.7
V
GS
= 4.5V
–––
–––
–––
–––
–––
–––
Max. Units
414
A
1707
1.2
–––
–––
–––
–––
–––
–––
V
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 32V
V
GS
= 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
Diode Characteristics
D
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
T
J
= 25°C
V
DD
= 34V
V/ns T
J
= 175°C,I
S
= 100A,V
DS
= 40V
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
ns
3
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May 18, 2015
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
IRL40B209
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
3.5V
BOTTOM
100
3.5V
100
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)
T J = 175°C
100
T J = 25°C
VDS = 10V
60µs PULSE WIDTH
10
1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14
ID = 100A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
C, Capacitance (pF)
VDS= 32V
VDS= 20V
VDS= 8V
Ciss
10000
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50 100 150 200 250 300 350 400 450
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
May 18, 2015
1000
10000
IRL40B209
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
Limited by Package
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
1000
T J = 175°C
100
T J = 25°C
100
VGS = 0V
10
0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
10
100
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
1.8
50
Id = 5.0mA
1.6
1.4
1.2
Energy (µJ)
48
46
1.0
0.8
0.6
44
42
0.4
0.2
40
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
0.0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
VGS = 3.5V
VGS = 4.5V
VGS = 6.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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