PD - 95035
IRG4RC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V
GE
= 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
• Lead-Free
Short Circuit Rated
UltraFast IGBT
C
Features
V
CES
= 600V
G
E
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
n-channel
Benefits
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
D-PAK
TO-252AA
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
°C/W
g (oz)
*
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
2/20/04
IRG4RC10KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltageƒ
600 —
—
V
V
GE
= 0V, I
C
= 250µA
Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C V
GE
= 0V, I
C
= 1.0mA
Collector-to-Emitter Saturation Voltage
— 2.39 2.62
I
C
= 5.0A
V
GE
= 15V
See Fig. 2, 5
— 3.25 —
V
I
C
= 9.0A
— 2.63 —
I
C
= 5.0A, T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.5
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance „
1.2 1.8
—
S
V
CE
= 50V, I
C
= 5.0A
Zero Gate Voltage Collector Current
—
—
250
µA
V
GE
= 0V, V
CE
= 600V
—
— 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Diode Forward Voltage Drop
—
1.5 1.8
V
I
C
= 4.0A
See Fig. 13
—
1.4 1.7
I
C
= 4.0A, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
19
2.9
9.8
49
28
97
140
0.25
0.14
0.39
—
46
32
100
310
0.56
7.5
220
29
7.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
29
I
C
= 5.0A
4.3
nC
V
CC
= 400V
See Fig.8
15
V
GE
= 15V
—
—
T
J
= 25°C
ns
150
I
C
= 5.0A, V
CC
= 480V
210
V
GE
= 15V, R
G
= 100Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
0.48
See Fig. 9,10,14
—
µs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 100Ω , V
CPK
< 500V
—
T
J
= 150°C,
See Fig. 10,11,14
—
I
C
= 5.0A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 100Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
42
ns
T
J
= 25°C See Fig.
57
T
J
= 125°C
14
I
F
= 4.0A
5.2
A
T
J
= 25°C See Fig.
6.7
T
J
= 125°C
15
V
R
= 200V
60
nC
T
J
= 25°C See Fig.
105
T
J
= 125°C
16
di/dt = 200A/µs
—
A/µs T
J
= 25°C See Fig.
—
T
J
= 125°C
17
2
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IRG4RC10KDPbF
1.6
For both:
LOAD CURRENT (A)
1.2
Duty cycle: 50%
TJ = 125°C
Tsink =
55
90°C
Gate drive as specified
Power Dissipation =
1.4
W
Square wave:
0.8
60% of rated
voltage
I
0.4
Ideal diodes
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
°
C
10
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector Current (A)
T
J
= 150
°
C
10
T
J
= 150
°
C
T
J
= 25
°
C
1
5
10
1
1.0
V
GE
= 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
V
CC
= 50V
5µs PULSE WIDTH
15
20
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4RC10KDPbF
10
5.0
8
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
Maximum DC Collector Current(A)
I
C
= 10 A
4.0
6
3.0
4
I
C
=
5A
2.0
I
C
= 2.5 A
2
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC10KDPbF
400
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 5.0A
C, Capacitance (pF)
300
16
Cies
200
12
8
100
Coes
Cres
1
10
100
4
0
0
V
CE
, Collector-to-Emitter Voltage (V)
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
0.40
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.38
I
C
= 5.0A
50
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
0.36
I
C
=
10
A
1
0.34
I
C
=
5
A
0.32
I
C
=
2.5
A
0.30
0
20
40
60
80
100
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance
(
Ω)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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