V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.50 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
V30120C
PIN 1
PIN 3
PIN 2
CASE
3
1
VF30120C
PIN 1
PIN 3
PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB
and TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-263AB
K
K
TO-262AA
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
2
1
1
VB30120C
PIN 1
PIN 2
K
HEATSINK
2
3
Case:
TO-220AB,
TO-262AA
ITO-220AB,
TO-263AB
and
VI30120C
PIN 1
PIN 3
PIN 2
K
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
J
max.
Package
Diode variations
2 x 15 A
120 V
150 A
0.68 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Common cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified current
(fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V30120C
VF30120C
30
15
150
130
0.5
10 000
1500
-40 to +150
A
mJ
A
V/μs
V
°C
VB30120C
VI30120C
UNIT
V
A
120
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 12-Dec-16
Document Number: 89041
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 5 A
I
F
= 7.5 A
T
A
= 25 °C
V
F
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
I
F
= 15 A
I
F
= 5 A
I
F
= 7.5 A
I
F
= 15 A
V
R
= 90 V
T
A
= 25 °C
SYMBOL
V
BR
TYP.
120 (min.)
0.56
0.71
0.86
0.50
0.60
0.68
11
8
-
17
MAX.
-
-
-
0.97
-
-
0.76
-
-
800
50
μA
mA
μA
mA
V
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
Instantaneous forward voltage per diode
(1)
Reverse current per diode
(2)
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
V30120C
2.2
VF30120C
4.5
VB30120C
2.2
VI30120C
2.2
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V30120C-E3/4W
VF30120C-E3/4W
VB30120C-E3/4W
VB30120C-E3/8W
VI30120C-E3/4W
UNIT WEIGHT (g)
1.89
1.75
1.38
1.38
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
40
18
Resistive or Inductive Load
35
16
D = 0.5
D = 0.3
D = 0.8
Average Forward Rectified Current (A)
Average Power Loss (W)
V(B,I)30120C
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
175
VF30120C
14
12
10
D = 0.1
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
D = t
p
/T
t
p
T
D = 1.0
D = 0.2
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 12-Dec-16
Document Number: 89041
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
Junction to Case
10
T
A
= 125 °C
T
A
= 100 °C
1
T
A
= 25 °C
V(B,I)30120C
1
0.01
0.1
1
10
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
Junction to Case
1
0.1
0.01
T
A
= 25 °C
VF30120C
0.1
0.01
0.1
1
10
100
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 12-Dec-16
Document Number: 89041
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
PIN
2
3
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 12-Dec-16
Document Number: 89041
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 12-Dec-16
Document Number: 89041
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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