Si1405BDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
a, b
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
-8
±8
-1.6
c
- 1.6
c
- 1.6
a, b, c
- 1.6
a, b, c
- 8
c
- 1.6
c
- 1.47
a, b
2.27
1.45
1.47
a, b
0.95
a, b
- 55 to 150
260
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a,
d
Symbol
t
≤
5s
Steady State
R
thJA
R
thJF
Typical
70
44
Maximum
85
55
Unit
°C/W
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 74634
S10-0645-Rev. B, 22-Mar-10
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1
Si1405BDH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 1.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.4 A, V
GS
= 0 V
- 0.8
23
5.8
6
17
T
C
= 25 °C
- 1.6
-8
- 1.2
35
8.7
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 4 V, R
L
= 1.78
Ω
I
D
≅
- 2.25 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 2.8 A
V
DS
= - 4 V, V
GS
= 0 V, f = 1 MHz
305
108
66
3.67
0.61
0.98
6.3
10
26
16
7
15
39
24
10.5
ns
Ω
5.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= - 8 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 2.8 A
V
GS
= - 2.5 V, I
D
= - 2.3 A
V
GS
= - 1.8 V, I
D
= - 0.5 A
V
DS
= - 4 V, I
D
= - 2.8 A
-8
0.091
0.132
0.171
4.8
0.112
0.160
0.205
S
Ω
- 0.45
-8
- 5.4
1.98
- 0.95
- 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74634
S10-0645-Rev. B, 22-Mar-10
Si1405BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
V
GS
= 5
V
thru 2.5
V
2.4
6
I
D
- Drain Current (A)
V
GS
= 2
V
4
I
D
- Drain Current (A)
1.8
3.0
1.2
T
J
= 25 °C
T
J
= 125 °C
2
V
GS
= 1.5
V
0.6
T
J
= - 55 °C
0.4
0.8
1.2
1.6
2.0
0
0
1
2
3
4
0.0
0.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.5
500
Transfer Characteristics
R
DS(on)
- D to S On-Resistance (Ω)
0.4
V
GS
= 1.8
V
C - Capacitance (pF)
400
C
iss
300
0.3
0.2
V
GS
= 2.5
V
0.1
V
GS
= 4.5
V
200
C
oss
100
C
rss
0.0
0
2
4
I
D
- Drain Current (A)
6
8
0
0
2
4
6
8
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 2.8 A
4
V
DS
= 4
V
R
DS(on)
- On-Resistance
(Normalized)
1.5
1.8
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
= 4.5
V,
I
D
= 2.8 A
V
GS
= 2.5
V,
I
D
= 2.3 A
1.2
V
GS
= 1.8
V,
I
D
= 0.5 A
0.9
3
V
DS
= 6.4
V
2
1
0.6
0
0
1
2
3
4
5
0.3
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 74634
S10-0645-Rev. B, 22-Mar-10
On-Resistance vs. Junction Temperature
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Si1405BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.24
I
D
= 2.8 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
0.18
T
A
= 125 °C
0.12
1
T
J
= 150 °C
T
J
= 25 °C
0.1
0.06
T
A
= 25 °C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.9
30
25
I
D
= 250
µA
20
V
GS(th)
(V)
Power (W)
0.7
On-Resistance vs. Gate-to-Source Voltage
0.8
15
0.6
10
0.5
5
0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100 ms
1s
10 s
DC
I
D
- Drain Current (A)
1
0.1
0.01
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
*
V
GS
1
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
10
Safe Operating Area, Junction-to-Ambient
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Document Number: 74634
S10-0645-Rev. B, 22-Mar-10
Si1405BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
3.0
4
I
D
- Drain Current (A)
2.4
3
Power (W)
1.8
2
Package Limited
1.2
1
0.6
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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