MWI 50-06 A7
MWI 50-06 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
1
2
I
C25
= 72 A
= 600 V
V
CES
V
CE(sat) typ.
= 1.9 V
Type:
MWI 50-06 A7
MWI 50-06 A7T
NTC - Option:
without NTC
with NTC
5
6
9
10
16
15
14
T
NTC
3
4
17
7
8
11
12
T
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±
20
72
50
I
CM
=
100
V
CEK
≤
V
CES
10
225
V
V
A
A
A
µs
W
Features
●
●
●
●
●
●
●
●
●
●
●
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
●
●
●
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.2
4.5
0.7
200
50
60
300
30
2.3
1.7
2800
120
2.4
6.5
0.6
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.55 K/W
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
●
●
●
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
AC motor control
AC servo and robot drives
power supplies
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
1-4
MWI 50-06 A7
MWI 50-06 A7T
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
72
45
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
Conditions
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
1.6
1.3
25
90
1.8
1.5
V
V
A
ns
1.19 K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.82 V; R
0
= 28 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 0.89 V; R
0
= 8 m
Ω
Thermal Response
Temperature Sensor NTC
(MWI ... A7T version only)
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
0.02
180
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+125
2500
2.7 - 3.3
°C
°C
V~
Nm
Conditions
T = 25°C
Characteristic Values
min.
typ. max.
4.75
5.0
3375
5.25 kΩ
K
IGBT (typ.)
C
th1
= 0.201 J/K; R
th1
= 0.42 K/W
C
th2
= 1.252 J/K; R
th2
= 0.131K/W
Free Wheeling Diode (typ.)
C
th1
= 0.116 J/K; R
th1
= 0.973 K/W
C
th2
= 0.88 J/K; R
th2
= 0.217 K/W
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min.
typ. max.
5
mΩ
mm
mm
K/W
g
Higher magnification on page B3 - 72
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
2-4
MWI 50-06 A7
MWI 50-06 A7T
150
A
120
V
GE
= 17V
15V
13V
150
A
120
90
11V
V
GE
= 17V
15V
13V
I
C
I
C
90
60
30
0
0
1
2
3
4
V
CE
5
V
9V
T
VJ
= 25°C
11V
60
30
0
9V
T
VJ
= 125°C
6
0
1
2
3
4
V
CE
5
V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
A
120
I
C
90
A
75
I
F
60
90
45
60
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
30
T
VJ
= 25°C
30
0
4
6
8
10
12
V
GE
V
CE
= 20V
15
0
0.0
14
V
16
0.5
1.0
V
F
1.5
V
2.0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
40
A
I
RM
20
V
150
120
ns
90
60
T
VJ
= 125°C
V
R
= 300V
I
F
= 30A
MWI5006A7
15
V
GE
t
rr
t
rr
30
10
20
5
V
CE
= 300V
I
C
= 50A
10
I
RM
30
0
0
0
40
80
120
Q
G
nC
0
160
0
200
400
600
800
A/μs
-di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
3-4
MWI 50-06 A7
MWI 50-06 A7T
10.0
mJ
E
on
t
d(on)
100
ns
75
t
E
off
4
mJ
E
off
400
ns
300
t
t
d(off)
7.5
t
r
3
5.0
V
CE
= 300V
V
GE
= ±15V
50
2
V
CE
= 300V
V
GE
= ±15V
200
2.5
E
on
R
G
= 22Ω
T
VJ
= 125°C
25
1
R
G
= 22Ω
T
VJ
= 125°C
100
0.0
0
40
80
I
C
A
0
120
0
0
40
80
I
C
t
f
A
0
120
Fig. 7 Typ. turn on energy and switching
times versus collector current
4
mJ
E
on
E
on
80
ns
60
t
r
V
CE
= 300V
V
GE
= ±15V
I
C
= 50A
T
VJ
= 125°C
Fig. 8 Typ. turn off energy and switching
times versus collector current
3
mJ
t
E
off
E
off
600
ns
t
d(on)
3
2
t
d(off)
V
CE
= 300V
V
GE
= ±15V
I
C
= 50A
T
VJ
= 125°C
400
t
2
40
1
200
1
0
10
20
30
40
R
G
20
50
Ω
60
0
0
10
20
30
40
R
G
t
f
50
Ω
60
0
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
I
CM
10
K/W
Z
thJC
1
Fig.10 Typ. turn off energy and switching
times versus gate resistor
diode
IGBT
90
0.1
60
0.01
30
R
G
= 22
Ω
T
VJ
= 125°C
single pulse
0.001
0.0001
0.00001 0.0001 0.001
MWI5006A7
0
0
100
200
300
400
500
600
V
CE
700
V
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
4-4
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
