Si4390DY
Vishay Siliconix
N-Channel Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
()
0.0095 at V
GS
= 10 V
0.0135 at V
GS
= 4.5 V
I
D
(A)
12.5
10.5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q
gd
for Switching Losses
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
8
7
6
5
Top View
S
Ordering Information:
Si4390DY-T1-E3 (Lead (Pb)-free)
Si4390DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
D
D
D
G
D
SO-8
S
S
S
G
1
2
3
4
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
2.7
3.0
1.9
- 55 to 150
12.5
10
20
1.3
1.4
0.9
W
°C
10 s
Steady State
30
± 20
8.5
6.8
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
32
68
15
Maximum
42
90
20
°C/W
Unit
Document Number: 72150
S11-0209-Rev. F, 14-Feb-11
www.vishay.com
1
Si4390DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.7 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 6
0.2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.5 A
10
3.5
2.1
0.8
16
6
43
14
35
1.4
30
12
70
25
60
ns
15
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 10.5 A
V
DS
= 15 V, I
D
= 12.5 A
I
S
= 2.7 A, V
GS
= 0 V
30
0.0075
0.0105
38
0.7
1.1
0.0095
0.0135
0.8
2.8
± 100
1
5
V
nA
µA
A
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
30
3V
30
20
20
T
C
= 125 °C
10
25 °C
- 55 °C
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72150
S11-0209-Rev. F, 14-Feb-11
Si4390DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.030
1800
C
iss
R
DS(on)
- On-Resistance ()
0.024
C - Capacitance (pF)
1500
1200
0.018
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.006
900
C
oss
600
300
C
rss
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
DS
= 15 V
I
D
= 12.5 A
V
GS
- Gate-to-Source Voltage (V)
5
R
DS(on)
- On-Resistance
(Normalized)
1.6
1.8
V
GS
= 10 V
I
D
= 12.5 A
Capacitance
4
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
50
0.040
On-Resistance vs. Junction Temperature
10
R
DS(on)
- On-Resistance ()
I
S
- Source Current (A)
T
J
= 150 °C
0.032
I
D
= 12.5 A
0.024
1
T
J
= 25 °C
0.016
0.008
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72150
S11-0209-Rev. F, 14-Feb-11
www.vishay.com
3
Si4390DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.6
0.4
160
V
GS(th)
Variance (V)
0.2
Power (W)
0.0
- 0.2
- 0.4
40
- 0.6
- 0.8
- 50
0
0.001
I
D
= 250 µA
120
200
80
- 25
0
25
50
75
100
125
150
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power
100
Limited by
R
DS(on)*
10
1 ms
I
D
- Drain Current (A)
10 ms
1
100 ms
1s
10 s
DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (s)
2. Per Unit Base = R
thJA
= 68 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72150
S11-0209-Rev. F, 14-Feb-11
Si4390DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72150.
Document Number: 72150
S11-0209-Rev. F, 14-Feb-11
www.vishay.com
5
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