BTA06T-600CWRG
6 A Snubberless™ Triac
Features
A2
■
■
■
■
High static and dynamic commutation
BTA series is UL1557 certified (File ref.:
81734)
Package is RoHS (2002/95/EC) compliant
I
GT
= 35 mA
G
A1
Applications
Specially designed for power tool applications, it
can also be used to drive loads like motor speed
controller, kitchen equipments such as electro
valves, light dimmers and similar.
A1
G
A2
Description
Available in through-hole package, the Triac
BTA06T-600CW is suitable for general purpose ac
switching.
Being a fully insulated package, the
BTA06T-600CW provides insulation rated at
2500 V rms.
TO-220AB insulated
BTA06T-600CW
TM:
Snubberless is a trademark of STMicroelectronics
June 2010
Doc ID 17641 Rev 2
1/8
www.st.com
8
Characteristics
BTA06T-600CWRG
1
Table 1.
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Characteristics
Absolute maximum ratings (limiting values)
Parameter
On-state rms current (full sine wave)
Non repetitive surge peak on-state current (full
cycle sine wave, T
j
initial = 25 °C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
F = 60 Hz
F = 50 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
c
= 100 °C
t = 16.7 ms
t = 20 ms
Value
6
47
A
45
13
50
V
DRM
/V
RRM
+ 100
Unit
A
A
²
s
A/µs
V
A
W
°C
V
DSM
/V
RSM
Non repetitive surge peak off-state voiltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
4
1
-40 to +150
-40 to +125
Table 2.
Symbol
I
GT(1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
Electrical characteristics, Snubberless (3 quadrants)
(T
j
= 25 °C, unless otherwise specified)
Test conditions
V
D
= 12 V R
L
= 30
Ω
V
D
= 12 V R
L
= 30
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
I
T
= 100 mA
I - III
I
G
= 1.2 x I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125 °C
Without snubber, T
j
= 125 °C
MAX
II
MIN
MIN
80
750
8.0
V/µs
A/ms
Quadrant
I - II - III
I - II - III
I - II - III
MAX
MAX
MIN
MAX
Value
35
1.3
0.2
35
50
mA
Unit
mA
V
V
mA
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 pin referenced to A1 pin
Table 3.
Symbol
V
TM(1)
V
TO(1)
R
D(1)
I
DRM
I
RRM
Static electrical characteristics
Test conditions
I
TM
= 8.5 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
MAX
MAX
MAX
MAX
1
mA
Value
1.6
0.85
80
5
Unit
V
V
mΩ
µA
1. For both polarities of A2 pin referenced to A1 pin
2/8
Doc ID 17641 Rev 2
BTA06T-600CWRG
Table 4.
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (ac)
Junction to ambient
Characteristics
Thermal resistances
Parameter
Value
3.4
°C/W
60
Unit
Figure 1.
P(W)
Maximum power dissipation versus Figure 2.
rms on-state current (full cycle)
I
T(RMS)
(A)
On-state current (rms) versus case
temperature (full cycle)
α=180°
8
α=180
°
7.0
6.0
5.0
7
6
5
4.0
4
3.0
3
2
180°
2.0
1.0
I
T(RMS)
(A)
0.0
1
0
0.0
0.5
1.0
1.5
2.0
2.5
T
C
(°C)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
25
50
75
100
125
Figure 3.
On-state current (rms) versus
ambient temperature
(free air convection)
α=180°
Figure 4.
Relative variation of thermal
impedance versus pulse duration
I
T(RMS)
(A)
2.5
1.E+00
K=[Z
th
/R
th
]
Zth(j-c)
2.0
1.E-01
1.5
Zth(j-a)
1.0
1.E-02
0.5
T
amb
(°C)
0.0
0
25
50
75
100
125
1.E-03
1.E-03
t
P
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger
current, and gate trigger voltage
versus junction temperature
I
GT
Q3
Figure 6.
Relative variation of holding
current and latching current versus
junction temperature
typical values
2.0
I
GT
, V
GT
[T
j
] / I
GT
, V
GT
[T
j
=25 °C]
typical values
2.0
I
H
, I
L
[T
j
] / I
H
, I
L
[T
j
=25 °C]
I
GT
Q1-Q2
1.5
1.5
I
H
1.0
V
GT
Q1-Q2-Q3
1.0
I
L
0.5
T
j
(°C)
0.5
T
j
(°C)
0.0
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.0
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90 100 110 120 130
Doc ID 17641 Rev 2
3/8
Characteristics
BTA06T-600CWRG
Figure 7.
I
TSM
(A)
Surge peak on-state current versus Figure 8.
number of cycles
1000
Non-repetitive surge peak on-state
current for sinusoidal
dI/dt limitation: 50 A/µs
T
j
initial=25 °C
50
45
40
35
30
25
20
15
10
5
0
I
TSM
(A), I²t (A²s)
t=20ms
Non repetitive
T
j
initial=25 °C
One cycle
100
I
TSM
pulse t
p
< 10 ms, and corresponding value of I t
2
10
Repetitive
T
C
=100 °C
I²t
Number of cycles
t
P
(ms)
1
1
10
100
1000
0.01
0.10
1.00
10.00
Figure 9.
On-state characteristics
(maximum values)
Figure 10. Relative variation of critical rate of
decrease of main current (di/dt)c
versus junction temperature
8
7
(dI/dt)
c
[T
j
] / (dI/dt)
c
[T
j
=125 °C]
100
I
TM
(A)
T
j
=25 °C
6
T
j
=125 °C
5
4
3
2
T
j
max :
V
to
= 0.85 V
R
d
= 80 mΩ
10
1
0
5
V
TM
(V)
1
0
1
2
3
4
T
j
(°C)
25
50
75
100
125
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c
versus reapplied (dV/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 12. Relative variation of static dV/dt
immunity versus junction
temperature
8
7
6
5
4
3
2
(dI/dt)
c
[ (dV/dt)
c
] / Specified (dI/dt)
c
typical values
dV/dt [T
j
] / dV/dt [T
j
=125 °C]
V
D
=V
R
=400 V
0.4
0.2
0.0
0.1
1.0
10.0
100.0
(dV/dt)
c
(V/µs)
1
T
j
(°C)
0
25
50
75
100
125
4/8
Doc ID 17641 Rev 2
BTA06T-600CWRG
Ordering information
2
Ordering information
Figure 13. Ordering information scheme
BT A 06 T - 600 CW RG
Triac series
Insulation
A = Insulated
Current
06 = 6 A
Specific application
Voltage
600 = 600 V
Sensitivity and type
C = 35 mA, W = Snubberless
Packing mode
RG = Tube
Doc ID 17641 Rev 2
5/8
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