MJE3439G
NPN Silicon High-Voltage
Power Transistor
This device is designed for use in line−operated equipment
requiring high f
T
.
Features
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•
•
•
•
High DC Current Gain
High Current−Gain − Bandwidth Product
Low Output Capacitance
These Devices are Pb−Free and are RoHS Compliant*
0.3 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 15 WATTS
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
mW/_C
_C
TO−225
CASE 77−09
STYLE 1
1 2
3
1
EMITTER
3
BASE
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
15
0.12
T
J
, T
stg
–65 to +150
Value
350
450
5.0
0.3
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
q
JC
Max
8.33
Unit
_C/W
MARKING DIAGRAM
YWW
E3439G
Y
WW
E3439
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE3439G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
Publication Order Number:
MJE3439/D
MJE3439G
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 5.0 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 300 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 450 Vdc, V
EB(off)
= 1.5 Vdc)
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 20 mAdc, V
CE
= 10 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 4.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 4.0 mAdc)
Base−Emitter On Voltage
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
f
T
15
C
ob
−
h
fe
25
−
10
−
−
pF
MHz
h
FE
30
15
V
CE(sat)
−
V
BE(sat)
−
V
BE(on)
−
0.8
1.3
Vdc
0.5
Vdc
−
200
Vdc
−
V
CEO(sus)
350
I
CEO
−
I
CEX
−
I
CBO
−
I
EBO
−
20
20
mAdc
500
mAdc
20
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MJE3439G
16
PD, POWER DISSIPATION (WATTS)
14
12
10
8.0
6.0
4.0
2.0
0
0
20
40
80
120
60
100
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 1. Power−Temperature Derating Curve
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.007
0.005
0.003
0.002
0.001
1.0
MJE3439
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200 300 500 1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area
The Safe Operating Area Curves indicate I
C
− V
CE
limits below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum T
J
, power−temperature derating must be observed for both steady state and pulse power
conditions.
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3
MJE3439G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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4
MJE3439/D
测试/测量
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