PD - 96124B
IRF7416QPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -30V
R
DS(on)
= 0.02Ω
6
5
Top View
Description
These HEXFET
®
Power MOSFET's in package utilize
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of these HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
Reel.
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
SO-8
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
V/ns
°C
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
e
d
Thermal Resistance
R
θJA
Junction-to-Ambient
g
Parameter
Max.
50
Units
°C/W
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1
06/29/11
IRF7416QPbF
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Conditions
-30
––– –––
V V
GS
= 0V, I
D
= -250μA
––– -0.024 ––– V/°C Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.6A
––– ––– 0.020
Ω
V
GS
= -4.5V, I
D
= -2.8A
––– ––– 0.035
-1.0 ––– -2.04
V V
DS
= V
GS
, I
D
= -250μA
5.6
––– –––
S V
DS
= -10V, I
D
= -2.8A
V
DS
= -24V, V
GS
= 0V
––– ––– -1.0
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
––– –––
-25
V
GS
= -20V
––– ––– -100
nA
––– ––– 100
V
GS
= 20V
f
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
1700
890
410
92
12
32
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= -5.6A
V
DS
= -24V
V
GS
= -10V, See Fig. 6 & 9
V
DD
= -15V
I
D
= -5.6A
R
G
= 6.2Ω
R
D
= 2.7Ω, See Fig. 10
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
fÃ
ns
f
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
56
99
-3.1
A
-45
-1.0
85
150
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V
T
J
= 25°C,I
F
= -5.6A
di/dt = 100A/μs
e
e
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 25mH
max. junction temperature. ( See fig. 11 )
I
SD
≤
-5.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
R
G
= 25Ω, I
AS
= -5.6A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
2
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IRF7416QPbF
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
10
-3.0V
-3.0V
20μs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
1
1
0.1
1
20μs PULSE WIDTH
T
J
= 150°C
A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25°C
T
J
= 150°C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -5.6A
-I
D
, Drain-to-Source Current (A)
1.5
1.0
0.5
1
3.0
3.5
4.0
V
DS
= -10V
20μs PULSE WIDTH
4.5
5.0
5.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -10V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7416QPbF
4000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -5.6A
V
DS
= -24V
V
DS
= -15V
16
C, Capacitance (pF)
3000
C
iss
2000
12
C
oss
8
1000
C
rss
4
0
1
10
100
A
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 9
60
80
100
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
100us
T
J
= 150°C
10
T
J
= 25°C
10
1ms
1
0.4
0.6
0.8
1.0
V
GS
= 0V
A
1.2
1
0.1
T
A
= 25 °C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7416QPbF
Q
G
V
DS
V
GS
R
G
-10V
R
D
-10V
V
G
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
50KΩ
12V
.2μF
.3μF
t
d(on)
t
r
t
d(off)
t
f
V
GS
10%
+
D.U.T.
-
V
DS
V
GS
-3mA
90%
V
DS
I
G
I
D
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
100
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
1
10
100
10
0.1
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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+
-
Q
GS
Q
GD
D.U.T.
V
DD
5
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