MOSFET 60V N-Ch Enh FET 500mOhm 1.3A 120mJ
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Diodes Incorporated |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SO-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 1.3 A |
Rds On - Drain-Source Resistance | 600 mOhms |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 1.28 W |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
高度 Height | 1.75 mm |
长度 Length | 4.9 mm |
产品 Product | MOSFET |
类型 Type | Intellifet |
宽度 Width | 3.9 mm |
Fall Time | 15 us |
Rise Time | 10 us |
工厂包装数量 Factory Pack Quantity | 2500 |
Typical Turn-Off Delay Time | 45 us |
Typical Turn-On Delay Time | 5 us |
单位重量 Unit Weight | 0.002610 oz |
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