Freescale Semiconductor
Technical Data
Document Number: MW7IC2040N
Rev. 1, 11/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2040N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 1990 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
130 mA, I
DQ2
= 330 mA, P
out
= 4 Watts Avg., f = 1932.5, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 32 dB
Power Added Efficiency — 17.5%
ACPR @ 5 MHz Offset —
-
50 dBc in 3.84 MHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 40 Watts
CW P
out
.
•
Typical P
out
@ 1 dB Compression Point
'
30 Watts CW
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 90 mA, I
DQ2
=
430 mA, P
out
= 16 Watts Avg., 1805 - 1880 MHz
Power Gain — 33 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ1
= 90 mA, I
DQ2
= 430 mA,
P
out
= 40 Watts CW, 1805 - 1880 MHz and 1930 - 1990 MHz
Power Gain — 31 dB
Power Added Efficiency — 50%
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
1930 - 1990 MHz, 1805 - 1880 MHz,
4 W AVG., 28 V
SINGLE W - CDMA, GSM EDGE, GSM
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2040NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2040GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2040NBR1
GND
V
DS1
V
GS2
V
GS1
NC
RF
in
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
V
DS1
RF
in
RF
out
/V
DS2
14
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
NC
V
GS1
V
GS2
V
DS1
GND
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +150
150
225
25
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W - CDMA
(P
out
= 4 W Avg., Case Temperature = 73°C)
GSM EDGE
(P
out
= 16 W Avg., Case Temperature = 76°C)
GSM
(P
out
= 40 W Avg., Case Temperature = 79°C)
Symbol
R
θJC
Stage 1, 28 Vdc, I
DQ1
= 130 mA
Stage 2, 28 Vdc, I
DQ2
= 330 mA
Stage 1, 28 Vdc, I
DQ1
= 130 mA
Stage 2, 28 Vdc, I
DQ2
= 330 mA
Stage 1, 28 Vdc, I
DQ1
= 130 mA
Stage 2, 28 Vdc, I
DQ2
= 330 mA
4.0
1.5
Value
(2,3)
Unit
°C/W
4.1
1.4
3.9
1.3
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 25
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 130 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 130 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
13
2
2.7
14.5
2.7
—
16
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 140
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 330 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 330 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Stage 2 — Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
246
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
7
0.2
2
2.8
8
0.39
2.7
—
9
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 130 mA, I
DQ2
= 330 mA, P
out
= 4 W Avg.,
f = 1932.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 22 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(2)
with 5.6 kΩ Gate Feed Resistors ( - 30 to 85°C)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 4 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 30 W CW
Average Group Delay @ P
out
= 30 W CW, f = 1960 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 30 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
G
ps
PAE
ACPR
IRL
P1dB
IMD
sym
29.5
16
—
—
—
—
—
—
—
—
—
—
—
—
32
17.5
- 50
- 15
30
60
65
±3
1.2
0.5
2.5
33
0.029
0.003
34.5
—
- 46
-8
—
—
—
—
—
—
—
—
—
—
MHz
%
dB
°
ns
°
dB/°C
dBm/°C
dB
%
dBc
dB
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 130 mA, I
DQ2
= 330 mA, 1930 - 1990 MHz
VBW
res
ΔI
QT
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
1. Part internally matched both on input and output.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical W - CDMA Performance — 1800 MHz
(In Freescale W - CDMA 1805 - 1880 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc,
I
DQ1
= 130 mA, I
DQ2
= 330 mA, P
out
= 4 W Avg., 1805 - 1880 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
ACPR
IRL
—
—
—
—
33.5
16.5
- 50
-6
—
—
—
—
dB
%
dBc
dB
Typical GSM EDGE Performance — 1800 MHz
(In Freescale GSM EDGE 1805 - 1880 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc,
P
out
= 16 W Avg., I
DQ1
= 90 mA, I
DQ2
= 430 mA, 1805 - 1880 MHz EDGE Modulation
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
PAE
EVM
SR1
SR2
—
—
—
—
—
33
35
1.5
- 62
- 77
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical GSM EDGE Performance — 1900 MHz
(In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc,
P
out
= 16 W Avg., I
DQ1
= 90 mA, I
DQ2
= 430 mA, 1930 - 1990 MHz EDGE Modulation
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
PAE
EVM
SR1
SR2
—
—
—
—
—
30
33
1.5
- 62
- 80
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performance
(In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 90 mA,
I
DQ2
= 430 mA, P
out
= 40 W CW, 1805 - 1880 MHz and 1930 - 1990 MHz
Power Gain
Power Added Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
G
ps
PAE
IRL
P1dB
—
—
—
—
31
50
- 15
45
—
—
—
—
dB
%
dB
W
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
4
RF Device Data
Freescale Semiconductor
+
C13
Z13
1
2
G1
3
G2
4
5 NC
6
C14
V
GG1
R1
V
GG2
R2
C12
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z9
C10
C2
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13, Z14
Z15
Z16
PCB
0.3419″ x 0.1725″ Microstrip
0.3419″ x 0.4671″ Microstrip
0.0830″ x 0.4220″ Microstrip
0.0830″ x 0.2855″ Microstrip
0.0830″ x 0.9030″ Microstrip
0.0830″ x 0.2499″ Microstrip
Rogers RO4350, 0.030″,
ε
r
= 3.5
7 NC
8 G2
9
G1
10
11
C16
Quiescent Current
Temperature
Compensation
Z9
NC 13
12
C4
Z14
C18
C8
C9
C5
DUT
16
NC 15
Z8
C15
14
Z10
Z11
Z12
Z15
Z16
RF
OUTPUT
C3
C17
C6
C7
V
DD2
V
DD1
Z3
RF
INPUT
Z1
Z2
Z4
Z5
C11
C1
Z6
Z7
0.0826″ x 0.5043″
0.0826″ x 0.3639″
0.0826″ x 0.4258″
0.0826″ x 0.3639″
0.0826″ x 0.3060″
0.0826″ x 0.9290″
0.0600″ x 0.1273″
0.0800″ x 1.3684″
Figure 3. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 1930 - 1990 MHz
Table 6. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz
Part
C1, C2, C3, C4, C5
C6, C7, C8, C9, C10, C11
C12
C13
C14, C16
C15
C17, C18
R1, R2
Description
6.8 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
2.2
μF,
16 V Chip Capacitor
470
μF,
63 V Electrolytic Capacitor, Radial
0.8 pF Chip Capacitors
1 pF Chip Capacitor
1
μF,
50 V Chip Capacitors
5.6 KΩ, 1/4 W Chip Resistors
Part Number
ATC100B6R8CT500XT
GRM55DR61H106KA88L
C1206C225K4RAC
MCGPR63V477M13X26 - RH
ATC100B0R8BT500XT
ATC100B1R0BT500XT
GRM21BR71H105KA12L
CRCW12065601FKEA
Manufacturer
ATC
Murata
Kemet
Multicomp
ATC
ATC
Murata
Vishay
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
5
PCB设计
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