IR25603(S)PBF
Self-Oscillating Half-Bridge Driver
Features
Floating channel designed for bootstrap operation
Integrated 600 V half-bridge gate driver
15.6 V zener clamp on Vcc
True micropower start up
Tighter initial dead time control
Low temperature coefficient dead time
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1 V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Product Summary
V
OFFSET
Duty Cycle
T
r
/ T
f
V
CLAMP
Dead time (typ.)
Io+/Io- (typ.)
600 V max.
50%
80 ns / 40 ns
15.6 V
1.2
µs
180 mA / 260 mA
Description
The IR25603(S) incorporates a high voltage half-bridge gate
driver with a front end oscillator similar to the industry
standard CMOS 555 timer. A shutdown feature has been
designed into the CT pin, so that both gate driver outputs
can be disabled using a low voltage control signal. In
addition, the gate driver output pulse widths are the same
once the rising undervoltage lockout threshold on Vcc has
been reached, resulting in a more stable profile of frequency
vs time at startup. Special attention has been paid to
maximizing the latch immunity of the device and providing
comprehensive ESD protection on all pins
.
Package Options
8 Lead SOIC
8 Lead PDIP
Ordering Information
Standard Pack
Form
SO8N
SO8N
PDIP8
Tube
Tape and Reel
Tube
Quantity
95
2500
50
Base Part Number
IR25603SPBF
IR25603SPBF
IR25603PBF
Package Type
Orderable Part Number
IR25603SPBF
IR25603STRPBF
IR25603PBF
1
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© 2014 International Rectifier
January 17, 2014
IR25603(S)PBF
Typical Connection Diagram
2
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© 2014 International Rectifier
January 17, 2014
IR25603(S)PBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dVs/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
R
T
pin voltage
C
T
pin voltage
Supply current†
R
T
pin current
Allowable offset supply voltage transient
8 lead PDIP
Package power dissipation @ TA ≤
8 lead SOIC
+25°C
8 lead PDIP
Thermal resistance, junction to
8 lead SOIC
ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
—
-5
—
—
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
25
5
50
1
0.625
125
200
150
150
300
Units
V
mA
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The V
S
offset rating is tested
with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
CC
I
CC
T
A
Definition
High side floating supply absolute voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
Ambient temperature
Min.
V
CC
– 0.7
††
10
†††
-40
Max.
V
CLAMP
600
V
CLAMP
5
125
Units
V
mA
°C
† This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal breakdown voltage of 15.6V. Please note
that this supply pin should not be driven by a DC, low impedance power source greater than the V
CLAMP
specified in the Electrical
Characteristics section.
†† Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V.
††† Enough current should be supplied to the V
CC
pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin.
3
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© 2014 International Rectifier
January 17, 2014
IR25603(S)PBF
Recommended Component Values
Symbol
R
T
C
T
Component
Timing resistor value
C
T
pin capacitor value
Min.
10
330
Max.
—
—
Units
kΩ
pF
IR25603 RT vs. Frequency
4
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© 2014 International Rectifier
January 17, 2014
IR25603(S)PBF
Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, CL = 1000 pF, CT = 1nF and T
A
= 25°C unless otherwise specified.
Low Voltage Supply Characteristics
Symbol
V
CCUV+
V
CCUV-
V
CCUVH
I
QCCUV
I
QCC
V
CLAMP
Symbol
I
QBSUV
I
QBS
V
BSMIN
I
LK
Definition
V
CC
supply undervoltage positive
going threshold
V
CC
supply undervoltage negative
going threshold
V
CC
undervoltage hysteresis
Micropower startup V
CC
supply
current
Quiescent V
CC
supply current
V
CC
zener clamp voltage
Definition
Micropower startup V
BS
supply
current
Quiescent V
BS
supply current
Minimum required V
BS
voltage for
proper functionality from R
T
to HO
Offset supply leakage current
Min.
8.1
7.2
0.5
—
—
14.4
Min.
—
—
—
—
Typ.
9.0
8.0
1.0
75
500
15.6
Typ.
0
30
4.0
—
Max.
9.9
8.8
1.5
150
950
16.8
Max.
10
50
5.0
50
V
µA
V
CC
= V
CCUV+
+ 0.1V
V
B
= V
S
= 600V
µA
V
V
CC
≤ V
CCUV-
I
CC
= 5mA
Test Conditions
V
CC
≤ V
CCUV-
V
Units
Test Conditions
Floating Supply Characteristics
Units
µA
Oscillator I/O Characteristics
Symbol
f
OSC
d
I
CT
I
CTUV
V
CT+
V
CT-
V
CTSD
V
RT+
Definition
Oscillator frequency
R
T
pin duty cycle
C
T
pin current
UV-mode C
T
pin pull down current
Upper C
T
ramp voltage threshold
Lower C
T
ramp voltage threshold
C
T
voltage shutdown threshold
High-level R
T
output voltage, V
CC
-
V
RT
Low-level R
T
output voltage
UV-mode R
T
output voltage
SD-Mode R
T
output voltage, V
CC
-
V
RT
—
—
Min.
19.4
94
48
—
0.3
—
—
1.8
—
—
—
V
RT-
V
RTUV
—
Typ.
20
100
50
0.001
0.7
8
4
2.1
10
100
10
100
0
10
10
Max.
20.6
106
52
1.0
1.2
—
—
2.4
50
300
50
300
100
50
300
mV
Units
kHz
%
µA
mA
V
I
RT
= 100
µA
I
RT
= 1mA
I
RT
= 100
µA
I
RT
= 1mA
V
CC
≤ V
CCUV-
I
RT
= 100
µA,
V
CT
= 0V
I
RT
= 1mA,
V
CT
= 0V
January 17, 2014
Test Conditions
R
T
= 36.9kΩ
R
T
= 7.43kΩ
f
O
< 100kHz
V
CC
= 7V
V
RTSD
5
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