1N4448WS
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
1N4448WS
ORDERING CODE
1N4448WS-E3-08 or 1N4448WS-E3-18
1N4448WS-HE3-08 or 1N4448WS-HE3-18
CIRCUIT CONFIGURATION
Single
TYPE MARKING
A3
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave rectification
with resistive load
(1)
Surge forward current
Power dissipation
(1)
TEST CONDITION
SYMBOL
V
R
V
RRM
VALUE
75
100
150
350
200
UNIT
V
V
mA
mA
mW
f
≥
50 Hz
t < 1 s and T
j
= 25 °C
I
F(AV)
I
FSM
P
tot
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
650
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 1.5, 07-Jul-17
Document Number: 81387
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4448WS
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 100 mA
I
F
= 5 mA
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V, T
j
= 150 °C
V
F
= V
R
= 0 V
SYMBOL
V
F
V
F
I
R
I
R
I
R
C
D
t
rr
0.620
MIN.
TYP.
MAX.
1
0.720
25
5
50
4
4
UNIT
V
V
nA
μA
μA
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
I
F
= 10 mA, i
R
= 1 mA, V
R
= 6 V,
R
L
= 100
Ω
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
3
250
P
tot
- Power Dissipation (mW)
10
2
T
j
= 100 °C
T
j
= 25 °C
200
I
F
(mA)
10
150
1
100
10
- 1
50
10
- 2
0
18105
0
1
2
20324
0
50
100
150
200
V
F
(V)
Fig. 1 - Forward Characteristics
T
amb
- Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
10
4
5
2
T
j
= 25 °C
f = 1 kHz
1.1
T
j
= 25 °C
f = 1 MHz
10
3
5
2
1.0
R
f
(Ω)
C
D
(0 V)
C
D
(V
R
)
10
2
5
2
0.9
0.8
10
5
2
0.7
0
17440
10
-2
17438
10
-1
1
10
10
2
2
4
6
8
10
I
F
(mA)
V
R
(V)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.5, 07-Jul-17
Document Number: 81387
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4448WS
www.vishay.com
Vishay Semiconductors
10
4
5
2
10
3
5
2
I
R
(nA)
10
2
5
2
10
5
2
V
R
= 20 V
1
0
17441
100
200
T
j
(°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
I
n
= t
P
/T
I
FRM
t
P
T
T = 1/f
P
10
I
FRM
(A)
n
=0
0.1
0.2
0.5
5
4
3
2
t
1
5
4
3
2
0.1
10
-5
17442
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
5
10
-1
2
5
1
2
5
10
t
P
(s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.5, 07-Jul-17
Document Number: 81387
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4448WS
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-323
1.15 [0.045]
0.8 [0.031]
0.2 [0.008]
0.1 [0.004] max.
1.1 [0.043]
Vishay Semiconductors
0.15 [0.006]
0.25 [0.010]
1.95 [0.077]
Cathode bar
1.60 [0.063]
0.40 [0.016]
0.20 [0.008]
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
1.5 [0.059]
0° - 8°
0.40 [0.016]
0.10 [0.004]
0.8 [0.031]
1.6 [0.063]
Document no.:
S8-V-3910.02-001
(4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 1.5, 07-Jul-17
Document Number: 81387
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.6 [0.024]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000