PD - 96976D
IRF6626
DirectFET Power MOSFET
RoHS compliant containing no lead or bromide
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for both Sync. FET and some Control FET
applications
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
6.7nC
R
DS(on)
Q
gs2
1.6nC
R
DS(on)
Q
oss
13nC
30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V
Q
rr
5.4nC
V
gs(th)
1.8V
19nC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
15
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
e
h
h
k
Ãe
f
VGS, Gate-to-Source Voltage (V)
30
±20
16
13
72
130
24
13
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
ID= 13A
VDS= 24V
VDS= 15V
A
mJ
A
ID = 16A
10
T J = 125°C
5
T J = 25°C
0
3
4
5
6
7
8
30
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.29mH, R
G
= 25Ω, I
AS
= 13A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
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1
11/17/05
IRF6626
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
64
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
23
4.0
5.2
–––
-6.0
–––
–––
–––
–––
–––
19
5.2
1.6
6.7
5.5
8.3
13
–––
Conditions
V
GS
= 0V, I
D
= 250µA
–––
–––
5.4
7.1
2.35
–––
1.0
150
100
-100
–––
29
–––
–––
–––
–––
–––
1.5
–––
–––
–––
–––
–––
–––
–––
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 16A
g
V
GS
= 4.5V, I
D
= 13A
g
V
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 13A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 13A
See Fig. 17
nC
Ω
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 13A
–––
–––
–––
–––
–––
–––
–––
13
15
17
4.5
2380
530
260
ns
Clamped Inductive Load
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
15
5.4
130
1.0
23
8.1
V
ns
nC
Min.
–––
Typ. Max. Units
–––
52
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 13A
di/dt = 100A/µs
g
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6626
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
h
h
k
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
hl
il
jl
kl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
gÃ
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
1
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
τ
5
Ri (°C/W)
0.6677
1.0463
1.5612
29.2822
25.4550
τi
(sec)
0.000066
0.000896
0.004386
0.686180
32
0.1
τ
1
τ
2
τ
3
τ
4
τ
5
0.01
Ci=
τi/Ri
SINGLE PULSE
Ci
τi/Ri
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6626
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
2.5V
10
2.5V
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
10
1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
1000
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤
60µs PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
1.5
ID = 16A
VGS = 4.5V
ID, Drain-to-Source Current
(Α)
V GS = 10
1.0
1
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 7.
Normalized On-Resistance vs. Temperature
25
T J = 25°C
20
Typical RDS(on) ( mΩ)
C, Capacitance(pF)
10000
15
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
10
5
0
0
20
40
60
80
100
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
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IRF6626
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
T J = 40°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
10msec
1
1
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
0.1
Ta = 25°C
Tj = 150°C
Single Pulse
0.01
0.10
1.00
10.00
100.00
0.01
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
80
VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50µA
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
ID, Drain Current (A)
-75
-50
-25
0
25
50
75
100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Threshold Voltage vs. Temperature
ID
80
TOP
5.6A
8.4A
BOTTOM 13A
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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