Freescale Semiconductor
Technical Data
Document Number: MRF5S21045
Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
N Suffix Indicates Lead - Free Terminations
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
2170 MHz, 10 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S21045NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S21045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
- 0.5, +68
- 0.5, +15
130
0.74
- 65 to +150
200
45
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
Symbol
R
θJC
Value
(1,2)
1.35
1.48
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4.
Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 120
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 500 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
0.9
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
0.2
—
—
3.8
—
3.2
3.5
5
0.35
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 10 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
13.5
24
—
—
—
14.5
25.5
- 37
- 39
- 12
16.5
—
- 35
- 37
-9
dB
%
dBc
dBc
dB
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
2
RF Device Data
Freescale Semiconductor
R1
V
BIAS
R2
C1
C2
Z6
C3
C4
C5
+
C6
V
SUPPLY
Z13
R3
Z1
C7
C8
C9
DUT
Z8
C10
C11
Z2
Z3
Z4
Z5
Z7
Z12
Z11
Z10
C12
Z9
RF
INPUT
RF
OUTPUT
C13
C14
C15
Z1, Z9
Z2
Z3
Z4
Z5
Z6
0.250″ x 0.080″ Microstrip
0.987″ x 0.080″ Microstrip
0.157″ x 0.080″ Microstrip
0.375″ x 0.080″ Microstrip
0.480″ x 1.000″ Microstrip
0.510″ x 0.080″ Microstrip
Z7
Z8, Z13
Z10
Z11
Z12
PCB
0.500″ x 1.000″ Microstrip
0.270″ x 0.080″ Microstrip
0.789″ x 0.080″ Microstrip
0.527″ x 0.080″ Microstrip
0.179″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Table 6. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part
C1
C2, C3, C7, C12, C13
C4, C5, C14, C15
C6
C8, C10
C9
C11
R1, R2
R3
Description
220 nF Chip Capacitor (1812)
6.8 pF 100B Chip Capacitors
6.8
µF
Chip Capacitors (1812)
220
µF,
63 V Electrolytic Capacitor, Radial
1 pF 100B Chip Capacitors
1.5 pF 100B Chip Capacitor
0.5 pF 100B Chip Capacitor
10 kW, 1/4 W Chip Resistors
10
W,
1/4 W Chip Resistor
Part Number
1812Y224KXA
100B6R8CW
C4532X5R1H685MT
13668221
100B1R0BW
100B1R5BW
100B0R5BW
Manufacturer
Vishay - Vitramon
ATC
TDK
Philips
ATC
ATC
ATC
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
3
C1
R1
R2
C2
C4 C5
C3
C6
C7
C8
R3
CUT OUT AREA
C9
C10
C11
C12
C13
C14 C15
MRF5S21045N
Rev. 0
Figure 2. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
−10
−13
−16
−19
−22
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−8
−11
−14
−17
−20
IRL, INPUT RETURN LOSS (dB)
800 mA
650 mA
500 mA
−50
−60
1
350 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
15.2
15
14.8
G
ps
, POWER GAIN (dB)
14.6
14.4
14.2
14
13.8
13.6
13.4
2060
IM3
ACPR
2080
2100
2120
2140
2160
2180
2200
IRL
G
ps
V
DD
= 28 Vdc, P
out
= 10 W (Avg.), I
DQ
= 500 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
32
28
24
20
16
−28
−32
−36
−40
−44
2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 10 Watts
14.8
14.6
14.4
G
ps
, POWER GAIN (dB)
14.2
14
13.8
13.6
13.4
13.2
13
2060
IM3
ACPR
2080
2100
2120 2140 2160
f, FREQUENCY (MHz)
2180
2200
IRL
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 20 W (Avg.), I
DQ
= 500 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
46
42
38
34
30
−18
−22
−26
−30
−34
2220
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 20 Watts
17
16
G
ps
, POWER GAIN (dB)
15
14
13
12
11
1
I
DQ
= 800 mA
650 mA
500 mA
350 mA
200 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
−20
I
DQ
= 200 mA
−30
−40
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
5
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