IDT54/74FCT821/A/B
HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
HIGH PERFORMANCE
CMOS BUS INTERFACE
REGISTER
FEATURES:
DESCRIPTION:
IDT54/74FCT821A/B
• Equivalent to AMD’s Am29821-25 bipolar registers in pinout/
function, speed and output drive over full temperature and
voltage supply extremes
• IDT54/74FCT821A equivalent to FAST™ speed
• IDT54/74FCT821B 25% faster than FAST
• I
OL
= 48mA (commercial) and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output compatibility
• CMOS output level compatible
• Substantially lower input current levels than AMD’s bipolar
Am29800 series (5µA max.)
• Military product compliant to MIL-STD-883, Class B
• Available in the following packages:
– Commercial: SOIC
– Military: CERDIP, LCC
The FCT821 series is built using an advanced dual metal CMOS
technology. The FCT821 series bus interface registers are designed to
eliminate the extra packages required to buffer existing registers and
provide extra data width for wider address/data paths or buses carrying
parity. The 74FCT821 is a buffered, 10-bit wide version of the popular
FCT374 function.
The FCT821 high-performance interface family is designed for high-
capacitance load drive capability, while providing low-capacitance bus
loading at both inputs and outputs. All inputs have clamp diodes and all
outputs are designed for low-capacitance bus loading in high-impedance
state.
FUNCTIONAL BLOCK DIAGRAM
OE
CP
C
1
D
0
1
D
Q
23
Y
TO NINE OTHER CHANNELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
JUNE 2002
DSC-5427/2
© 2002 Integrated Device Technology, Inc.
IDT54/74FCT821/A/B
HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
OE
D
1
D
0
NC
Y
1
2
6 25
24
23
22
21
20
1
3
1
4
1
5
1
6
1
7
1
8
1
9
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
GND
2
3
4
5
6
7
8
9
10
11
12
23
22
21
20
19
18
17
16
15
14
13
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
CP
D
2
D
3
D
4
NC
D
5
D
6
D
7
5
6
7
8
9
10
11
12
4
3
2
1
2
8
2
7
Y
0
INDEX
V
CC
OE
1
24
V
CC
Y
2
Y
3
Y
4
NC
Y
5
Y
6
Y
7
GND
NC
D
8
D
9
Y
9
CERDIP/ SOIC
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
V
TERM
(3)
T
A
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage
with Respect to GND
Terminal Voltage
with Respect to GND
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
0 to +70
–55 to +125
–55 to +125
0.5
120
–55 to +125
–65 to +135
–65 to +150
0.5
120
°C
°C
°C
W
mA
–0.5 to V
CC
–0.5 to V
CC
V
Commercial
–0.5 to +7
Military
–0.5 to +7
Unit
V
LOGIC SYMBOL
10
D
D
Q
CP
CP
OE
10
Y
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Outputs and I/O terminals only.
PIN DESCRIPTION
Pin Name
Dx
CP
I/O
I
I
O
I
Description
D Flip-Flop Data Inputs
Clock Pulse for the Register. Enters data into the
register on the LOW-to-HIGH transition
Register 3-State Outputs
Output Control. When the
OE
input is HIGH, the Yx
outputs are in the high impedance state. When the
OE
input is LOW, the TRUE register data is present
at the Yx outputs.
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
Yx
OE
NOTE:
1. This parameter is measured at characterization but not tested.
2
CP
Y
8
IDT54/74FCT821/A/B
HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FUNCTION TABLE
(1)
OE
H
H
H
L
H
L
H
H
L
L
Inputs
Dx
L
H
X
X
X
X
L
H
L
H
CP
↑
↑
X
X
X
X
↑
↑
↑
↑
Outputs
Yx
Z
Z
Z
L
Z
NC
Z
Z
L
H
Function
High Z
Clear
Hold
Load
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
NC = No Change
↑
= LOW-to-HIGH transition
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= 0°C to +70°C, V
CC
= 5.0V ±5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
V
IK
I
OS
V
OH
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OH
= –32µA
V
CC
= Min
I
OH
= –300µA
V
IN
= V
IH
or V
IL
I
OH
= –15mA MIL
I
OH
= –24mA COM
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OL
= 300µA
V
CC
= Min
I
OL
= 300µA
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL
I
OL
= 48mA COM
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
Input LOW Current
Off State (High Impedance)
Output Current
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max.
V
I
= V
CC
V
I
= 2.7V
V
I
= 0.5V
V
I
= GND
V
O
= V
CC
V
O
= 2.7V
V
O
= 0.5V
V
O
= GND
Min.
2
—
—
—
—
—
—
—
—
—
—
–75
V
HC
V
HC
2.4
2.4
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
—
—
–0.7
–120
V
CC
V
CC
4.3
4.3
GND
GND
0.3
0.3
Max.
—
0.8
5
5
(4)
–5
(4)
–5
10
10
(4)
–10
(4)
–10
–1.2
—
—
—
—
—
V
LC
V
LC
(4)
0.5
0.5
Unit
V
V
µA
µA
µA
V
mA
V
V
OL
Output LOW Voltage
V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed, but not tested.
3
IDT54/74FCT821/A/B
HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
Symbol
I
CC
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
Test Conditions
(1)
V
CC
= Max.
V
IN
≥
V
HC
; V
IN
≤
V
LC
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
OE
= GND
One Bit Toggling
at fi = 5MHz
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
OE
= GND
Eight Bits Toggling
at fi = 2.5MHz
50% Duty Cycle
V
IN
≥
V
HC
V
IN
≤
V
LC
Min.
—
—
—
Typ.
(2)
0.2
0.5
0.15
Max.
1.5
2
0.25
Unit
mA
mA
mA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
≥
V
HC
V
IN
≤
V
LC
V
IN
= 3.4V
V
IN
= GND
—
1.7
4
mA
—
2.2
6
V
IN
≥
V
HC
V
IN
≤
V
LC
V
IN
= 3.4V
V
IN
= GND
—
4
7.8
(5)
—
6.2
16.8
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input; (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of
∆I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
/2+ f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Output Frequency
N
i
= Number of Outputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
4
IDT54/74FCT821/A/B
HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
IDT54/74FCT821A
Com’l.
Parameter Description
t
PLH
t
PHL
Propagation Delay
CP to Yx (OE = LOW)
Conditions
(1)
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
t
SU
t
H
t
W
t
PZH
t
PZL
Set-up Time HIGH or LOW, Dx to CP
Hold Time HIGH or LOW, Dx to CP
CP Pulse Width, HIGH or LOW
Output Enable Time
OE
to Yx
C
L
= 50pF
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
t
PHZ
t
PLZ
Output Disable Time
OE
to Yx
C
L
= 5pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
IDT54/74FCT821B
Mil.
Com’l.
Max.
11.5
20
—
—
—
13
25
8
9
Min.
(2)
—
—
3
1.5
6
—
—
—
—
Max.
7.5
15
—
—
—
8
15
6.5
7.5
—
—
3
1.5
6
—
—
—
—
Mil.
Min.
(2)
Max.
8.5
16
—
—
—
9
16
7
8
ns
ns
ns
Unit
Min.
(2)
—
—
4
2
7
—
—
—
—
Max.
10
20
—
—
—
12
23
7
8
Min.
(2)
—
—
4
2
7
—
—
—
—
ns
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
