电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

FMC-26U

产品描述0.5 A, 600 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小76KB,共3页
制造商ETC
下载文档 全文预览

FMC-26U概述

0.5 A, 600 V, SILICON, SIGNAL DIODE

FMC-26U文档预览

Ultra-Fast-Recovery Rectifier Diodes
600V
V
RM
(V)
Package
Part Number
I
F (AV)
(A)
30.0
0.5
0.5
0.6
1.0
1.0
1.2
2.0
1.0 (2.0)
3.0
4.0
5.0
5.0
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
t
rr
t
rr
1
2
: I
F
/ I
R
(=I
F
) 90% Recovery Point
(ex. I
F
/ I
R
=100mA/100mA 90% Recovery Point)
: I
F
/ I
R
(=2 I
F
) 75% Recovery Point
(ex. I
F
/ I
R
=100mA/200mA 75% Recovery Point)
Tj
(°C)
Tstg
(°C)
V
F
(V)
max
1.7
1.8
2.0
2.0
2.0
2.0
1.55
1.7
2.0
1.5
2.5
1.5
1.5
1.2
1.7
1.5
2.5
2.0
2.2
2.2
1.7
I
R
(µA)
I
R
(H)
(mA)
Ta
(°C)
150 (Tj)
100
100
100
100
100
150
150 (Tj)
100
150 (Tj)
100
100
150
150 (Tj)
150
150
100
150 (Tj)
100
100
100
t
rr
1
t
rr
I
F
/ I
FP
(mA)
2
I
F
V = V V = V
R
RM R
RM
(A)
max
max
30.0
0.5
0.5
0.6
1.0
1.0
1.2
3.0
2.0
3.0
4.0
5.0
5.0
5.0
10.0
10.0
8.0
3.0
3.0
7.5
10.0
100
100
100
100
500
500
50
50
500
50
500
100
0.5
0.5
0.5
0.5
2.5
2.5
0.1
0.2
2.5
0.1
3.0
0.5
(ns)
(ns)
I
F
/ I
FP
(mA)
500/1000
100/200
100/200
100/200
100/200
100/200
100/200
100/200
100/200
500/1000
100/200
500/1000
500/1000
100/200
500/1000
500/1000
500/1000
500/1000
100/200
100/200
500/1000
Rth (j- ) Mass Fig.
Rth (j-c) (g) No.
(°C/W)
2.0
22
20
17
15
12
12
10
8
8
4.0
4.0
4.0
4.0
4.0
4.0
2.0
4.0
4.0
2.0
2.0
1.04
0.13
0.2
0.3
Surface Mount
MP3-306
180
15
10
10
50
50
30
60
50
80
50
50
50
50
100
100
80
50
50
80
100
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
150 500/500
100 100/100
100 100/100
100 100/100
100 100/100
100 100/100
50 100/100
50 100/100
100 100/100
50 500/500
100 100/100
50 500/500
30 500/500
100 100/100
50 500/500
30 500/500
100 500/500
70 500/500
100 100/100
100 100/100
65 500/500
70
50
50
50
50
50
35
35
50
35
50
35
25
50
30
25
50
35
50
50
35
AG01A
EG01A
EG 1A
RG 10A
Axial
0.4
0.6
0.6
69
1.0
1.2
1.2
2.1
72
2.1
2.1
2.1
2.1
2.1
5.5
2.1
2.1
5.5
78
5.5
80
74
74
75
79
70
71
68
RG 2A
RD 2A
RL 3A
RG 4A
RL 4A
600
FMG-G26S
FML-G16S
FMX-G16S
Frame-2Pin
50 15
50 10
100
0.3
FMN-G16S
FMD-G26S
FMX-G26S
FMG-G36S
FMC-26U
*
5.0
10.0
10.0
8.0
3.0
6.0
15.0
20.0
100 20
500
500
500
1000
100
3
3
3
5
0.3
Center-tap
FMG-26S, R
FMG-36S, R
FML-36S
*
: Under development
30
Page where
characteristic
curve is shown
80
64
65
66
Ultra-Fast-Recovery Rectifier Diodes
600V
s
External Dimensions
0.57
±0.02
Flammability: UL94V-0 or Equivalent (Unit: mm)
0.6
±0.05
0.78
±0.05
0.78
±0.05
0.98
±0.05
Cathode Mark
50.0
±1.0
62.3
±0.7
2.9
±0.1
5.0
±0.2
Cathode Mark
62.3
±0.7
5.0
±0.2
Cathode Mark
62.5
±0.7
7.2
±0.2
Cathode Mark
Cathode Mark
62.5
±0.7
2.4
±0.1
2.7
±0.2
2.7
±0.2
7.2
±0.2
4.0
±0.2
4.0
±0.2
10.0
1.2
±0.05
Cathode Mark
1.4
±0.1
Cathode Mark
0.8
2.2
62.5
±0.7
50.0
±0.1
9.1
±0.2
8.0
±0.2
3.3
4.0
8.4
4.2
2.8
0.8 2.8 5.0
15.0
9.0
3.3
5.0
16.9
2.6
3.5
20.0
±0.5
2.3
3.4
1.0
3.9
20.0
5.2
±0.2
6.5
±0.2
5.08
1.35
0.85
(13.5)
16.5
±0.5
0.65
–0.1
+0.2
0.45
5.45
5.45
2.6
10.0
3.3
4.0
8.4
4.2
2.8
10.0
C 0.5
3.3
4.0
8.4
4.2
2.8
15.0
9.0
20.0
0.8 2.8 5.0
C 0.5
3.3
5.0
16.9
0.8
0.8
2.2
2.6
2.2
16.9
2.6
20.0
±0.5
16.5
±0.5
3.5
2.3
3.4
1.0
3.9
1.35
1.35
0.85
2.54
2.54
1.35
1.35
0.85
0.45
2.54
2.54
(13.5)
3.9
(13.5)
0.65
–0.1
+0.2
0.45
5.45
S type
5.45
R type
2.6
(1.4)
10.2
±0.3
4.44
±0.2
1.3
±0.2
b
c
1.27
±0.2
±0.2
(1.5)
8.6
±0.3
+0.3
10.0
–0.5
a
(1.5)
0.1
–0.1
2.59
±0.2
+0.2
1.2
3.0
–0.5
+0.3
0.86
–0.1
+0.2
0.4
±0.1
a: Part Number
b: Polarity
c: Lot No.
2.54
±0.5
2.54
±0.5
(Backside of case)
31
Characteristic Curves
Ultra-Fast-Recovery Rectifier Diodes
FMG-G26S
I
FSM
(A)
5
I
F(AV)
(A)
Tc—I
F (AV)
Derating
D.C.
Forward Current I
F
(A)
V
F
—I
F
Characteristics
(Typical)
30
10
50
I
FMS
Rating
I
FSM
(A)
4
40
20ms
Average Forward Current
1
Peak Forward Surge Current
3
t /T = 1/2
t / T = 1/3,
Sinewave
30
0.1
2
t /T = 1/6
T
a
= 150°C
100°C
60°C
25°C
20
1
0
50
0.01
10
0.001
70
90
110
130
Case Temperature Tc
(°C)
150
0
0.4
0.8 1.2 1.6 2.0 2.4
Forward Voltage V
F
(V)
2.8
0
1
5
10
Overcurrent Cycles
50
FMG-G2CS
I
FSM
(A)
I
F(AV)
(A)
I
FSM
(A)
3.0
Ta—I
F (AV)
Derating
V
F
—I
F
Characteristics
(Typical)
50
10
Forward Current I
F
(A)
I
FMS
Rating
30
25
20
15
10
5
0
2.4
20ms
1.8
1
1.2
0.1
T
a
= 150°C
100°C
60°C
25°C
0.6
0
0
0.01
0.001
Peak Forward Surge Current
Average Forward Current
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0
1
2
3
4
Forward Voltage V
F
(V)
5
1
5
10
Overcurrent Cycles
50
FML-G12S
I
F(AV)
(A)
I
FSM
(A)
t /T = 1/2
D.C.
Forward Current I
F
(A)
I
FSM
(A)
5
Tc—I
F (AV)
Derating
V
F
—I
F
Characteristics
(Typical)
20
10
65
60
50
I
FMS
Rating
20ms
4
t / T = 1/6
Average Forward Current
1
Peak Forward Surge Current
3
t /T= 1/ 3,
Sinewave
40
30
20
10
0
0.1
2
1
0
100
0.01
T
a
= 150°C
100°C
60°C
25°C
140
110
120
130
Case Temperature Tc
(°C)
150
0.001
0.1
0.3
0.5
0.7
0.9
1.1
Forward Voltage V
F
(V)
1.3
1
5
10
Overcurrent Cycles
50
FML-G13S, G14S
I
FSM
(A)
5
I
F(AV)
(A)
Tc—I
F (AV)
Derating
t / T = 1/2
D.C.
V
F
—I
F
Characteristics
(Typical)
20
10
Forward Current I
F
(A)
I
FMS
Rating
70
60
50
40
30
20
10
0
1
5
10
Overcurrent Cycles
50
I
FSM
(A)
4
Average Forward Current
1
3
0.1
2
1
0
70
0.01
T
a
= 150°C
100°C
60°C
25°C
130
90
110
Case Temperature Tc
(°C)
150
0.001
0
0.5
1.0
1.5
Forward Voltage V
F
(V)
2.0
FML-G16S
I
FSM
(A)
5
I
F(AV)
(A)
Tc—I
F (AV)
Derating
t /T = 1/2
V
F
—I
F
Characteristics
(Typical)
50
10
50
Peak Forward Surge Current
Sinewave
t / T= 1/ 3
t /T = 1/6
20ms
I
FMS
Rating
I
FSM
(A)
4
3
t / T= 1/ 3,
Sinewave
1
Peak Forward Surge Current
t / T = 1/6
Average Forward Current
Forward Current I
F
(A)
D.C.
40
20ms
30
2
0.1
T
a
= 150°C
100°C
60°C
25°C
20
1
0
90
0.01
10
0.001
100 110 120
130 140
Case Temperature Tc
(°C)
150
0
0.4
0.8 1.2 1.6 2.0
Forward Voltage V
F
(V)
2.4
0
1
5
10
Overcurrent Cycles
50
72

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2902  2888  1114  631  2482  59  23  13  50  38 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved