FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
February 2007
FMPA2151
2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power
Amplifier Module
Features
■
■
■
■
■
■
■
■
General Description
The FMPA2151 is a dual frequency band power amplifier
module designed for high performance WLAN
applications in the 2.4 to 2.5GHz and the 4.90 to 5.9GHz
frequency bands. The 16 pin 4 x 4 x 1.4 mm package with
internal matching on both input and output to 50
Ω
minimizes next level PCB space and allows for simplified
integration. Only two external bias bypass capacitors are
required. The two on-chip detectors provide power
sensing capability. The PA’s low power consumption and
excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Complimentary pin out available with part number
FMPA2153 for MIMO applications.
Dual band operation in a single package design
Integrated bias bypass
>33dB modulated gain 2.4 to 2.5GHz band
>33dB modulated gain 4.9 to 5.9GHz band
3.0% EVM at 19dBm modulated power out (2.4GHz)
3.5% EVM at 19dBm modulated power out (5.5GHz)
3.3V positive supply operation
Separate integrated power detectors with 20dB
dynamic range
■
16 pin 4 x 4 x 1.4mm leadless package
■
Internally matched to 50
Ω
and DC blocked RF
input/output
■
Optimized for use in 802.11a/b/g applications
Device (4 x 4 x 1.4mm)
Z
X
21 Y T T
51
Electrical Characteristics
(1)
802.11g (2.4-2.5 GHz) OFDM Modulation
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage (PA ON 2.4)
Mirror Supply Current (PA ON 2.4)
Gain
Average Packet Current @ +19dBm Pout
EVM @ +19dBm Pout
(2)
Detector Output @ +19dBm Pout
Detector Output @ +7dBm Pout
POUT Spectral Mask Compliance
(3)
Min.
2.4
3.0
2.6
Typ.
3.3
3.0
0.1
31
140
3.0
600
280
+20
Max.
2.5
3.6
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
mV
dBm
Notes:
1. V
CC
= 3.3V, PA ON 2.4 = 3.3V, T
A
= 25°C, PA is constantly biased, 50
Ω
system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMPA2151 Rev. E
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
Electrical Characteristics
(1)
802.11a OFDM Modulation
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage (PA ON 5.5)
Mirror Supply Current (PA ON 5.5)
Gain
Average Packet Current @ +19dBm Pout
EVM @ +19dBm Pout
(2)
(4.9 to 5.9GHz)
Detector Output @ +19dBm Pout
Detector Output @ +7dBm Pout
POUT Spectral Mask Compliance
(3)
Min.
4.9
3.0
2.6
Typ.
3.3
3.0
0.1
33
240
3.5
600
375
+20
Max.
5.9
3.6
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
mV
dBm
Absolute Maximum Ratings
(4)
Symbol
V
CC
I
CC
PA ON
Pin
Tcase
Tstg
Parameter
Positive Supply Voltage
Supply Current
Positive Bias Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Ratings
6
500
4
0
-40 to +85
-55 to +150
Units
V
mA
V
dBm
°C
°C
Notes:
1. V
CC
= 3.3V, PA ON 5.5 = 3.3V, T
A
= 25°C, PA is constantly biased, 50
Ω
system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
4. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
2
FMPA2151 Rev. E
www.fairchildsemi.com
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
Schematic
PA ON 2.4
VCC1 2.4
VDET 2.4
1µF
Pin
1
2
3
Description
GND
RF IN 2.4
RF IN 5.5
GND
PA ON 5.5
GND
VCC2 5.5
VDET 5.5
GND
RF OUT 5.5
RF OUT 2.4
GND
VDET 2.4
VCC1 2.4
GND
PA ON 2.4
CENTER GND
16
1
15
14
13
12
4
5
50Ω
50Ω
RF OUT 2.4
RF OUT 5.5
Z
XYTT
2151
RF IN 2.4
RF IN 5.5
6
7
8
9
10
11
50Ω
50Ω
2
3
4
5
11
10
9
6
7
8
1µF
VDET 5.5
PA ON 5.5
VCC2 5.5
12
13
14
15
16
17
Package Outline
TOP VIEW
12 11 10 9
13
14
15
16
Z
XYTT
2151
1
2
3
4
8
7
6
5
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X
21 Y T T
51
I/O 1 INDICATOR
1.40 Max.
FRONT VIEW
SEE DETAIL A
1
2
0.650
4.00±0.10
2.70
0.30
1.02 TYP.
0.30
TYP.
0.65
TYP.
0.10
TYP.
0.30
TYP.
0.650
2.70
4.00±0.10
BOTTOM VIEW
DETAIL A
TYP.
3
FMPA2151 Rev. E
www.fairchildsemi.com
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Precautions to Avoid Permanent Device Damage:
• Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. Devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC and ground contact
areas.
• Device Cleaning: Standard board cleaning techniques should
not present device problems provided that the boards are
properly dried to remove solvents or water residues.
• Static Sensitivity: Follow ESD precautions to protect against
ESD damage:
– A properly grounded static-dissipative surface on which to
place devices.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each person
to wear while handling devices.
• General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, and ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
• Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are protected
and require no special storage conditions. Once the sealed
bag has been opened, devices should be stored in a dry
nitrogen environment.
Device Usage:
Fairchild recommends the following procedures prior to
assembly.
• Assemble the devices within 7 days of removal from the dry
pack.
• During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
• If the 7-day period or the environmental conditions have been
exceeded, then the dry-bake procedure, at 125°C for 24 hours
minimum, must be performed.
Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT attachment.
Hand soldering is not recommended.
Reflow Profile
• Ramp-up: During this stage the solvents are evaporated from
the solder paste. Care should be taken to prevent rapid
oxidation (or paste slump) and solder bursts caused by violent
solvent out-gassing. A maximum heating rate is 3°C/sec.
• Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 60-180 seconds at 150-200°C.
• Reflow Zone: If the temperature is too high, then devices may
be damaged by mechanical stress due to thermal mismatch or
there may be problems due to excessive solder oxidation.
Excessive time at temperature can enhance the formation of
inter-metallic compounds at the lead/board interface and may
lead to early mechanical failure of the joint. Reflow must occur
prior to the flux being completely driven off. The duration of
peak reflow temperature should not exceed 20 seconds.
Soldering temperatures should be in the range 255–260°C,
with a maximum limit of 260°C.
• Cooling Zone: Steep thermal gradients may give rise to
excessive thermal shock. However, rapid cooling promotes a
finer grain structure and a more crack-resistant solder joint.
The illustration below indicates the recommended soldering
profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-free
attachment of the heat sink to the PWB. The solder joint should
be 95% void-free and be a consistent thickness.
Rework Considerations:
Rework of a device attached to a board is limited to reflow of the
solder with a heat gun. The device should be subjected to no
more than 15°C above the solder melting temperature for no
more than 5 seconds. No more than 2 rework operations should
be performed.
Recommended Solder Reflow Profile
260
Ramp-Up R ate
3
°C/sec
max
Peak tem p
260 +0/-5
°C
10 - 20 sec
Temperature (°C)
217
200
Time above
li quidus temp
60 - 150 sec
150
Preheat, 150 to 200
°C
60 - 180 sec
100
Ramp-Up R ate
3
°C/sec
max
50
25
Time 25
°C/sec
t o peak tem p
6 mi nutes max
Ramp-Do wn Rate
6
°C/sec
max
Time (Sec)
4
FMPA2151 Rev. E
www.fairchildsemi.com
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT
®
FAST
®
FASTr™
FPS™
FRFET™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
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®
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SILENT SWITCHER
®
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TinyPower™
TinyLogic
®
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®
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
5
FMPA2151 Rev. E
www.fairchildsemi.com
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