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CMBT2907A-T: 产品描述Bipolar Transistors - BJT PNP 0.6A 60V Gen Pur; 产品类别半导体分立半导体; 文件大小78KB，共2页; 制造商Rectron; 标准

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CMBT2907A-T概述

Bipolar Transistors - BJT PNP 0.6A 60V Gen Pur

CMBT2907A-T规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Rectron
产品种类 Product Category	Bipolar Transistors - BJT
RoHS	Details
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-23-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	1.6 V
Maximum DC Collector Current	0.6 A
Gain Bandwidth Product fT	200 MHz
最大工作温度 Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	300
高度 Height	1.15 mm
长度 Length	3 mm
系列 Packaging	Reel
宽度 Width	1.4 mm
Continuous Collector Current	0.6 A
Pd-功率耗散 Pd - Power Dissipation	250 mW (1/4 W)
工厂包装数量 Factory Pack Quantity	3000
单位重量 Unit Weight	0.000282 oz

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CMBT2907

PNP Silicon Planar Epitaxial Transistors

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

SOT-23 SMD Package

Absolute Maximum Ratings

(Ta = 25

C unless specified otherwise)

DESCRIPTION

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

Power dissipation up to Tamb = 25

Storage Temperature

Junction Temperature

DC Current Gain

-V

= 10V -I

= 500mA

Unit: mm

SYMBOL

-V

CEO

-V

CBO

-V

EBO

-I

tot

stg

off

CMBT2907

5.0

600

250

-55 to +150

150

> 30

< 100

> 200

CMBT2907A

5.0

UNITS

> 50

MHz

Turn-off switching time

-I

Con

= 150 mA; -I

Bon

= I

Boff

= 15 mA

Transition frequency at f = 100 MHz

-I

= 50 mA; -V

= 20 V

Thermal Characteristics

Junction to Ambient in free air

th(j-a)

500

K/W

Electrical Characteristics

(at Ta=25

C unless otherwise specified)

CONDITIONS

DESCRIPTION

SYMBOL

= 0, -V

= 50V

-I

CBO

Collector Cut Off Current

-I

CBO

= 0, -V

= 50V, Tj=125

-V

= 0.5V, -V

= 30V

-I

CEX

-V

= 3V, -V

= 30V

-I

BEX

Base Current

w/reverse biased emitter junction

Saturation Voltages

-V

CE(Sat)

-I

= 150mA, -I

= 15mA

-V

BE(Sat)

-V

CE(Sat)

-I

= 500mA, -I

= 50mA

-V

BE(Sat)

-V

(BR)CBO

Open emitter; -I

= 10uA, I

= 0

Collector-base breakdown voltage

-V

(BR)CEO

Open base; -I

= 10mA, I

= 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

-V

(BR)EBO

Open collector; -I

= 10uA, I

= 0

CMBT2907

CMBT2907A

< 20

< 50

< 0.4

< 1.3

< 1.6

< 2.6

> 60

> 40

> 5.0

< 10

UNITS

> 60

www.rectron.com

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CMBT2907A-T相似产品对比

	CMBT2907A-T	CMBT2907A
描述	Bipolar Transistors - BJT PNP 0.6A 60V Gen Pur	Bipolar Transistors - BJT PNP,0.6A,60V GenPur
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Rectron	Rectron
产品种类 Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Details	Details
Transistor Polarity	PNP	PNP
工厂包装数量 Factory Pack Quantity	3000	3000

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