VS-6CWQ10FNPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 3.5 A
Base
common
cathode
4
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
2 x 3.5 A
100 V
See Electrical table
4.9 mA at 125 °C
150 °C
Common cathode
5 mJ
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-6CWQ10FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7
100
440
0.63
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-6CWQ10FNPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 135 °C, rectangular waveform
7
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
440
70
5.0
0.5
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
3.5
UNITS
Revision: 14-Jan-11
Document Number: 94250
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ10FNPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward
voltage drop per leg
See fig. 1
Maximum reverse
leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
3A
V
FM (1)
6A
3A
6A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
V
R
= Rated V
R
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
4.9
0.48
30.89
92
5.0
10 000
V
m
pF
nH
V/μs
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.81
0.96
0.63
0.74
1
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
per leg
per device
R
thJC
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
°C/W
g
oz.
DC operation
See fig. 4
4.70
2.35
0.3
0.01
Case style D-PAK (similar to TO-252AA)
6CWQ10FN
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 14-Jan-11
Document Number: 94250
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ10FNPbF
www.vishay.com
Vishay Semiconductors
10
100
I
R
- Reverse Current (mA)
T
J
= 150 °C
1
I
F
- Instantaneous
Forward Current (A)
T
J
= 125 °C
0.1
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.001
T
J
= 25 °C
0.0001
1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 14-Jan-11
Document Number: 94250
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ10FNPbF
www.vishay.com
155
150
145
140
135
130
125
120
115
110
3.5
Vishay Semiconductors
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
2.0
1.5
1.0
0.5
0
Allowable Case Temperature (°C)
Average Power Loss (W)
3.0
2.5
DC
Square wave (D = 0.50)
80 % rated V
R
applied
DC
See note (1)
0
1
2
3
4
5
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 14-Jan-11
Document Number: 94250
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6CWQ10FNPbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
4
5
6
7
8
-
-
-
-
-
-
-
-
6
2
C
3
W
4
Q
5
10
6
FN
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (7 A)
Center tap configuration-
Package identifier:
W = D-PAK
Schottky “Q” series
Voltage rating (10 = 100 V)
FN = TO-252AA (D-PAK)
None = tube (50 pieces)
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
Revision: 14-Jan-11
Document Number: 94250
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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