Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel-2
30
30
R
DS(on)
(Ω)
0.0160 at V
GS
= 10 V
0.0186 at V
GS
= 4.5 V
0.0264 at V
GS
= 10 V
0.0290 at V
GS
= 4.5 V
I
D
(A)
a
Q
g
(Typ.)
8.0
e
8.0
e
8.0
e
8.0
e
19
6
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET
®
Monolithic TrenchFET
®
Power MOSFET and Schottky Diode
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Logic DC-DC
• Low Current DC-DC
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4622DY-T1-E3 (Lead (Pb)-free)
Si4622DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
G
1
Schottky Diode
G
2
D
1
D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Channel-1
30
± 20
8
e
8
e
8
b, c, e
7.2
b, c
60
2.8
1.8
b, c
25
31.2
3.3
2.1
2.2
b, c
1.4
b, c
- 55 to 150
Channel-2
30
± 16
8
e
6.7
6.7
b, c
5.3
b, c
30
2.6
1.7
b, c
15
11.2
3.1
2.0
2.0
b, c
1.3
b, c
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
45
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Steady State
29
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Document Number: 68695
S09-0764-Rev. B, 04-May-09
Symbol
R
thJA
R
thJF
Channel-1
Typ.
Max.
56
38
Channel-2
Typ.
Max.
55
33
62.5
40
Unit
°C/W
www.vishay.com
1
New Product
Si4622DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 10 V
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.6 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 6.7 A
V
GS
= 4.5 V, I
D
= 8.9 A
V
GS
= 4.5 V, I
D
= 6.4 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 9.6 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 6.7 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 9.6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 6.7 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.26
0.62
2458
760
385
110
150
50
40
13.2
19
6
8
2.1
6
1.4
1.3
3.1
2.6
6.2
Ω
60
20
29
12
nC
pF
g
fs
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= 15 V, I
D
= 6.7 A
Ch-1
Ch-2
Ch-2
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
25
20
0.0132 0.0160
0.022
0.0264
0.0155 0.0186
0.0240 0.0290
94
10
S
Ω
4.4
0.04
1.5
1
30
30
33
- 4.7
2.5
2.2
100
100
0.2
1
44
5
V
mV/°C
V
nA
mA
µA
mA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
Document Number: 68695
S09-0764-Rev. B, 04-May-09
New Product
Si4622DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Channel-1
I
F
= 7.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 5.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2 A
I
S
= 5.3 A
T
C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.57
0.8
26
17
15
8
13
10
13
7
ns
2.8
2.6
60
30
0.68
1.2
39
26
23
16
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 2
Ω
I
D
≅
7.7 A, V
GEN
= 10 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 2.8
Ω
I
D
≅
5.3 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 2
Ω
I
D
≅
7.7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 2.8
Ω
I
D
≅
5.3 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
14
8
8
10
25
17
9
8
27
14
15
12
29
21
11
11
21
16
16
20
38
26
18
15
35
21
23
18
44
32
17
17
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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