MOSFET 20V N-Ch P-Ch FET 8.0Vgs 125mW
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Central Semiconductor |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-963 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V, 20 V |
Id - Continuous Drain Current | 160 mA, 140 mA |
Rds On - Drain-Source Resistance | 1.5 Ohms, 4 Ohms |
Vgs th - Gate-Source Threshold Voltage | 400 mV, 1 V |
Vgs - Gate-Source Voltage | 8 V, 8 V |
Qg - Gate Charge | 458 pC, 500 pC |
最小工作温度 Minimum Operating Temperature | - 65 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Dual |
Pd-功率耗散 Pd - Power Dissipation | 125 mW |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
Transistor Type | 1 N-Channel, 1 P-Channel |
Forward Transconductance - Min | 1.3 S, 140 mS |
工厂包装数量 Factory Pack Quantity | 8000 |
Typical Turn-Off Delay Time | 85 ns, 100 ns |
Typical Turn-On Delay Time | 25 ns, 35 ns |
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