Teccor
®
brand Thyristors
25 Amp High Temperature Alternistor Triacs
HQ6025xH5 Series
Description
RoHS
25Amp bi-directional Alternistor Triac is designed for AC
switching and phase control applications requiring a higher
temperature environment.
Alternistor type devices only operate in quadrants I, II, &
and are used in circuits requiring high dv/dt capability.
Features & Benefits
• 150°C maximum junction
temperature
• RoHS compliant
• Glass – passivated
junctions
Applications
Typically used in high-temperature environments where
available heat-sinking is minimal such as heating and white
goods applications.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
Value
25
600
50
Unit
A
V
mA
• Voltage capability up
to 600 V
• Surge capability up
to 300 A
Agency Approval
Agency
Agency File Number
L and K Packages: E71639
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Additional Information
Datasheet
Resources
Samples
Schematic Symbol
MT2
MT1
G
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
Teccor
®
brand Thyristors
25 Amp High Temperature Alternistor Triacs
Absolute Maximum Ratings
Symbol
Parameter
HQ6025LH5
I
T(RMS)
RMS on-state current
HQ6025RH5
HQ6025NH5
HQ6025KH5
Test Conditions
T
C
= 95°C
T
C
= 102°C
full cycle; f = 50Hz;
T
J
(initial) = 25°C
full cycle; f = 60Hz;
T
J
(initial) = 25°C
t
p
= 8.3ms
f = 60Hz; T
J
=150°C
T
J
= 150°C
T
J
= 150°C
25
A
Value
Unit
250
A
300
373
100
2
0.5
-40 to 150
-40 to 150
A
2
s
A/μs
A
W
°C
°C
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Peak non-repetitive surge current
I
2
t Value for fusing
Critical rate-of-rise of on-state current
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
I
H
dv/dt
(dv/dt)c
t
gt
Test Conditions
V
D
= 12V R
L
= 60
Ω
V
D
= 12V R
L
= 60
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 150°C
I
T
= 400mA (initial)
V
D
= V
DRM
; gate open; T
J
= 150°C
(di/dt)c = 13.3 A/ms; TJ = 150°C
I
G
= 2 x I
GT
PW = 15µs I
T
= 35.4A
Quadrant
I – II – III
I – II – III
I – II – III
MAX.
MAX.
MIN.
MAX..
MIN
MIN
TYP
.
Value
50
1.3
0.2
80
350
20
3
Unit
mA
V
V
mA
V/μs
V/μs
μs
Static Characteristics
Symbol
V
TM
I
DRM
/ I
RRM
I
T
= 35.4A; t
p
= 380 μs
V
DRM
/ V
RRM
T
J
= 25°C
T
J
= 150°C
Test Conditions
MAX.
MAX.
Value
1.4
5
6000
Unit
V
μA
Thermal Resistances
Symbol
Parameter
HQ6025LH5
R
θ(J-C)
Junction to case (AC)
HQ6025RH5
HQ6025NH5
HQ6025KH5
R
θ(J-A)
Note: xx = voltage
Value
2.0
0.86
1.35
50
45
Unit
°C/W
Junction to ambient
HQ6025LH5
HQ6025RH5
°C/W
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
Teccor
®
brand Thyristors
25 Amp High Temperature Alternistor Triacs
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature
2.5
Figure 2: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
2.0
Ratio of I
GT
/ I
GT
(T
J
= 25°C)
Ratio of V
GT
/ V
GT
(T
J
= 25°C)
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-40
-15
10
35
60
85
110
135
150
0.0
-40
-15
10
35
60
85
110
135
150
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
2.0
Figure 4: On-State Current vs. On-State
Voltage (Typical)
90
80
70
60
50
40
30
20
10
0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Ratio of I
H
/ I
H
(T
J
= 25°C)
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
110
135
150
Instantaneous On-state Current (i
T
) – Amps
Junction Temperature (T
J
) -- (°C)
Instantaneous On-state Voltage (v
T
) – Volts
Figure 5: Power Dissipation (Typical) vs. RMS
On-State Current
45
Figure 6: Maximum Allowable Case Temperature
vs. RMS On-State Current
Maximum Allowable Case Temperature (T
C
) - °C
160
Average On-State Power Dissipation
[P
D(AV)
] -- Watts
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
140
HQ6025RH5
HQ6025NH5
HQ6025KH5
120
100
HQ6025LH5
80
60
40
20
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
0
5
10
15
20
25
30
0
RMS On-State Current [I
T(RMS)
] -- Amps
RMS On-State Current [I
T(RMS)
] - Amps
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
Teccor
®
brand Thyristors
25 Amp High Temperature Alternistor Triacs
Figure 7: Maximum Allowable Case Temperature vs. Average On-State Current
Maximum Allowable Ambient Temperature
(T
A
) - °C
160
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
FREE AIR RATING
RMS On-State Current [I
T(RMS)
] -- Amps
Figure 8: Surge Peak On-State Current vs. Number of Cycles
1000
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) – Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [I
T(RMS)
]: Maximum Rated Value at
Specified Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
100
10
1
10
100
1000
Surge Current Duration -- Full Cycles
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
Teccor
®
brand Thyristors
25 Amp High Temperature Alternistor Triacs
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Temperature (t
L
)
Pb – Free assembly
T
P
Temperature
t
P
Ramp-up
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
T
L
T
S(max)
t
L
Preheat
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Time
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Physical Specifications
Terminal Material
Terminal Finish
Body Material
Copper Alloy
100% Matte Tin Plated
Environmental Specifications
Test
High Temperature
Voltage Blocking
Temperature Cycling
Specifications and Conditions
MIL
-STD-750: Method 1040, Condition A
Rated V
RRM
, 150°C, 1008 hours
MIL
-STD-750: Method 1051
-40°C to 150°C, 15-minute dwell,
100 cycles
EIA/JEDEC: JESD22-A101
320VDC, 85°C, 85%RH, 1008 hours
MIL
-STD-750: Method 1031
150°C, 1008 hours
-40°C, 1008 hours
MIL
-STD-750: Method 2031
260°C, 10 seconds
ANSI/J-STD-002, Category 3, Test A
MIL
-STD-750: Method 2036, Condition E
UL recognized epoxy meeting flammability
classification 94V-0
Biased Temp &
Humidity
High Temp. Storage
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Low-Temp Storage
Resistance to
Solder Heat
Solderability
Lead Bend
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
DigiKey得捷技术专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
