Speed TEMPFET
BTS244Z
Speed TEMPFET®
®
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
•
Green Product (RoHS Compliant)
Avalanche rated
1
1
5
PG-TO263-5-2
5
PG-TO220-5-12
•
AEC Qualified
V
DS
R
DS(on)
55 V
13 m
Type
BTS244Z
E3062A
BTS244Z
E3043
Package
PG-TO263-5-2
PG-TO220-5-
1
2
D
Pin 3 and TAB
G
Pin 1
A
Pin 2
Temperature
Sensor
K
Pin 4
S
Pin 5
Pin
1
2
3
4
5
Symbol
G
A
D
K
S
Function
Gate
Anode Temperature Sensor
Drain
Cathode Temperature Sensor
Source
Data Sheet
1
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage,
R
GS
= 20
k
Gate source voltage
Nominal load current (ISO 10483)
V
GS
= 4.5 V,
V
DS
V
GS
= 10 V,
V
DS
0.5 V,
T
C
= 85 °C
0.5 V,
T
C
= 85 °C
I
D
I
D puls
E
AS
P
tot
T
j
T
jpeak
T
stg
Symbol
V
DS
V
Value
55
55
20
A
19
26
35
188
1.65
170
-40 ...+175
200
-55 ... +150
E
40/150/56
J
W
°C
Unit
V
DGR
V
GS
I
D(ISO)
Continuous drain current
1)
T
C
= 100 °C,
V
GS
= 4.5V
Pulsed drain current
Avalanche energy, single pulse
I
D
= 19 A,
R
GS
= 25
Power dissipation
T
C
= 25 °C
Operating temperature
2)
Peak temperature ( single event )
Storage temperature
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
Data Sheet
2
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Thermal Characteristics
Parameter
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 130 μA
I
D
= 250 μA
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 25 °C
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 150 °C
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 19 A
V
GS
= 10 V,
I
D
= 19 A
R
DS(on)
-
-
16
11.5
18
13
I
GSS
-
-
10
20
100
100
m
I
DSS
-
-
-
-
0.1
-
0.1
1
100
nA
V
GS(th)
1.2
-
1.6
1.65
2
-
μA
V
(BR)DSS
55
-
-
V
Symbol
min.
Values
typ.
max.
Unit
Symbol
min.
R
thJC
R
th(JA)
R
th(JA)
-
-
-
Values
typ.
-
-
33
max.
0.88
62
40
Unit
K/W
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Data Sheet
3
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
V
DS
>2*I
D
*R
DS(on)max
,
I
D
= 35 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 2.2
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 2.2
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 2.2
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 47 A,
R
G
= 2.2
t
f
-
25
40
t
d(off)
-
40
60
t
r
-
70
105
t
d(on)
-
15
25
ns
C
rss
-
320
400
C
oss
-
600
750
g
fs
C
iss
25
-
-
2130
-
2660
S
pF
Symbol
min.
Values
typ.
max.
Unit
Gate Charge Characteristics
Gate charge at threshold
V
DD
= 40 V,
I
D
= 0.1 A,
V
GS
= 0 to 1 V
Gate charge at 5.0 V
V
DD
= 40 V,
I
D
= 47 A,
V
GS
= 0 to 5 V
Gate charge total
V
DD
= 40 V,
I
D
= 47 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 47 A
Data Sheet
4
Rev.1.4, 2013-07-26
Q
g(th)
Q
g(5)
Q
g(total)
V
(plateau)
-
-
-
-
2.5
50
85
4.5
3.8
75
130
-
nC
V
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 94 A
Reverse recovery time
V
R
= 30 V,
I
F
=I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 30 V,
I
F
=I
S
,
di
F
/dt
= 100 A/μs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at
http://www.infineon.com/tempfet/
Symbol
min.
I
S
I
FM
V
SD
t
rr
Q
rr
35
188
-
-
-
Values
typ.
-
-
1.25
110
0.23
max.
-
-
1.8
165
0.35
Unit
A
V
ns
μC
Forward voltage
I
AK(on)
= 5 mA,
T
j
= -40...+150 °C
I
AK(on)
= 1.5 mA,
T
j
= 150 °C
Sensor override
t
P
= 100 μs,
T
j
= -40...+150 °C
Forward current
T
j
= -40...+150 °C
Sensor override
t
P
= 100 μs,
T
j
= -40...+150 °C
V
AK(on)
-
-
-
I
AK(on)
-
-
1.3
-
-
-
-
1.4
0.9
10
5
600
V
mA
Data Sheet
5
Rev.1.4, 2013-07-26
传感器
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