PD - 97226A
DirectFET Power MOSFET
RoHs Compliant
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for High Performance Isolated Converter
Primary Switch Socket
l
Ideal for Control FET sockets in 36V-75V in
Synchronous Buck applications
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
IRF6655PbF
IRF6655TRPbF
R
DS(on)
Q
oss
4.5nC
53mΩ@ 10V
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
2.8nC
100V max ±20V max
Q
gs2
0.58nC
Q
rr
37nC
V
gs(th)
4.0V
8.7nC
SH
MN
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
SH
MQ
MX
MT
Description
The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655PbF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets
in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
200
180
160
140
120
100
80
60
40
20
0
4
6
8
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
100
±20
4.2
3.4
19
34
11
5.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
ID= 5.0A
VDS= 80V
VDS= 50V
VDS= 20V
A
mJ
A
Typical RDS(on) (mΩ)
ID = 5.0A
T J = 125°C
T J = 25°C
10
12
14
16
18
10
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical On-Resistance Vs. Gate Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.89mH, R
G
= 25Ω, I
AS
= 5.0A.
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1
08/25/06
IRF6655PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
100
–––
–––
2.8
–––
–––
–––
–––
–––
6.6
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.12
53
4.0
-11
–––
–––
–––
–––
–––
8.7
2.1
0.58
2.8
3.2
3.4
4.5
1.9
7.4
2.8
14
4.3
530
110
29
510
67
–––
–––
62
4.8
–––
20
250
100
-100
–––
11.7
–––
–––
4.2
–––
–––
–––
2.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 5.0A
i
V
mV/°C
µA
nA
S
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 5.0A
V
DS
= 50V
nC
V
GS
= 10V
I
D
= 5.0A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 5.0A
R
G
=6.0Ω
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
i
V
DS
= V
GS
, I
D
= 25µA
–––
–––
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
31
37
34
1.3
47
56
V
ns
nC
Min.
–––
Typ. Max. Units
–––
38
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 5.0A, V
DD
= 25V
di/dt = 100A/µs
i
See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6655PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
em
km
lm
fm
e
Parameter
Typ.
–––
12.5
20
–––
1.4
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
5
τ
A
Ri (°C/W)
1.6195
2.1406
22.2887
20.0457
11.9144
τi
(sec)
0.000126
0.001354
0.375850
7.410000
99
τ
1
τ
2
τ
3
τ
4
τ
5
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.01
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6655PbF
100
TOP
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
100
TOP
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
6.0V
BOTTOM
6.0V
1
1
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
100
Fig 5.
Typical Output Characteristics
2.0
ID = 5.0A
VGS = 10V
ID, Drain-to-Source Current
(Α)
10
Typical RDS(on), (Normalized)
12
1.5
T J = -40°C
T J = 25°C
1
T J = 150°C
VDS = 25V
≤60µs
PULSE WIDTH
0.1
2
4
6
8
10
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 7.
Normalized On-Resistance vs. Temperature
RDS(on), Drain-to -Source On Resistance ( mΩ)
120
100
T J = 125°C
C, Capacitance(pF)
1000
Ciss
Coss
100
Crss
80
60
T J = 25°C
Vgs = 10V
10
1
10
VDS, Drain-to-Source Voltage (V)
100
40
0
2
4
6
8
10
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 9.
Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
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IRF6655PbF
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100msec
10
T J = -40°C
T J = 25°C
T J = 150°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1
1msec
10msec
0.1
0.01
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
5
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
5.5
5
4.5
4
3.5
ID = 25µA
3
2.5
2
-75 -50 -25
0
25
50
75 100 125 150 175
TJ , Temperature ( °C )
ID = 250µA
ID = 1.0A
4
ID, Drain Current (A)
3
2
1
ID = 1.0mA
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
Fig 12.
Maximum Drain Current vs. Ambient Temperature
50
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Threshold Voltage vs. Temperature
ID
TOP
0.86A
1.3A
BOTTOM 5.0A
40
30
20
10
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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