IRGPS46160DPbF
V
CES
= 600V
I
C
= 160A, T
C
= 100°C
t
SC
≥
5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.70V @ I
C
= 120A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
E
C
G
Super-247
n-channel
G
Gate
C
Collector
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGPS46160DPbF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Package Type
Super-247
Standard Pack
Form
Quantity
Tube
25
Orderable part number
IRGPS46160DPbF
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Max.
600
240
160
360
480
240
480
±20
±30
750
375
h
Units
V
c
f
h
160
h
A
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.20
0.63
–––
40
Units
Thermal Resistance
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
d
Junction-to-Case (Diode)
d
Junction-to-Case (IGBT)
Parameter
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
°C/W
1
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© 2014 International Rectifier
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November 14, 2014
IRGPS46160DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔT
J
gfe
I
CES
V
FM
I
GES
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.27
1.70
2.15
2.20
—
-17
77
1.0
2.3
2.4
1.9
—
Typ.
240
70
90
5750
3430
9180
80
70
190
40
7740
4390
12130
80
75
230
55
7750
550
225
Max.
—
—
2.05
—
—
6.5
—
—
150
—
3.0
—
±400
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Conditions
V
GE
= 0V, I
C
= 100μA
V
GE
= 0V, I
C
= 4.0mA (25°C-175°C)
I
C
= 120A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 120A, V
GE
= 15V, T
J
= 150°C
I
C
= 120A, V
GE
= 15V, T
J
= 175°C
V
V
CE
= V
GE
, I
C
= 5.6mA
mV/°C V
CE
= V
GE
, I
C
= 5.6mA (25°C - 175°C)
S
V
CE
= 50V, I
C
= 120A
μA
V
GE
= 0V, V
CE
= 600V
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
I
F
= 120A
I
F
= 120A, T
J
= 175°C
nA
V
GE
= ±20V
Units
V
V/°C
e
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Units
nC
I
C
= 120A
V
GE
= 15V
V
CC
= 400V
I
C
= 120A, V
CC
= 400V, V
GE
= 15V
R
G
= 4.7Ω, L = 66μH, T
J
= 25°C
Energy losses include tail
& diode reverse recovery
Conditions
μJ
ns
g
μJ
ns
I
C
= 120A, V
CC
= 400V, V
GE
=15V
R
G
= 4.7Ω, L = 66μH, T
J
= 175°C
Energy losses include tail
& diode reverse recovery
g
pF
FULL SQUARE
5
—
—
—
—
500
130
36
—
—
—
—
μs
μJ
ns
A
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 480A
V
CC
= 480V, Vp
≤
600V
Rg = 4.7
Ω,
V
GE
= +20V to 0V
V
CC
= 400V, Vp
≤
600V
Rg = 4.7
Ω,
V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 120A
V
GE
= 15V, Rg = 4.7
Ω,
L = 100μH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 66μH, R
G
= 4.7Ω, tested in production I
LM
≤
400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Values influenced by parasitic L and C in measurement.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
2
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November 14, 2014
IRGPS46160DPbF
220
200
180
Load Current ( A )
160
140
120
100
I
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 375W
Square Wave:
V
CC
80
60
40
20
0.1
1
f , Frequency ( kHz )
10
100
Diode as specified
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
250
800
700
200
600
500
Ptot (W)
25
50
75
100
T C (°C)
125
150
175
150
IC (A)
400
300
200
100
100
50
0
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs. Case
Temperature
1000
100
10μsec
100
IC (A)
100μsec
10
1msec
IC A)
10
1
10000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
DC
1000
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
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November 14, 2014
IRGPS46160DPbF
350
300
250
350
300
250
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
200
150
100
50
0
0
1
2
3
4
5
6
200
150
100
50
0
7
8
9
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
350
300
250
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
600
500
-40°C
25°C
175°C
ICE (A)
150
100
50
0
0
2
4
IF (A)
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
400
300
200
100
0
6
8
10
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
6.0
VCE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
25
Fig. 9
- Typ. Diode Forward Characteristics
tp = 80μs
25
20
20
VCE (V)
ICE = 120A
10
ICE = 195A
VCE (V)
15
ICE = 6.0A
15
ICE = 6.0A
ICE = 120A
10
ICE = 195A
5
5
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
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November 14, 2014
IRGPS46160DPbF
25
350
IC, Collector-to-Emitter Current (A)
300
250
200
150
100
50
0
20
VCE (V)
15
ICE = 6.0A
ICE = 120A
ICE = 195A
T J = -40°C
T J = 25°C
T J = 175°C
10
5
0
5
10
VGE (V)
15
20
3
4
5
6
7
8
9
10
11
12
VGE, Gate-to-Emitter Voltage (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
30000
25000
20000
Swiching Time (ns)
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
1000
td OFF
Energy (μJ)
EON
15000
10000
5000
0
0
50
100
150
200
250
EOFF
100
tdON
tF
tR
10
0
50
100
150
200
250
IC (A)
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 66μH; V
CE
= 400V, R
G
= 4.7Ω; V
GE
= 15V
30000
25000
20000
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 66μH; V
CE
= 400V, R
G
= 4.7Ω; V
GE
= 15V
10000
Swiching Time (ns)
1000
Energy (μJ)
tdOFF
tR
15000
EON
10000
5000
0
0
20
40
60
80
100
EOFF
td ON
100
tF
10
0
20
40
60
80
100
RG (Ω)
Rg (Ω)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 66μH; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 66μH; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
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November 14, 2014
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