TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Zener voltage specified at 50 μA
• Maximum delta V
Z
given from 10 μA to 100 μA
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
1.8 to 43
0.05
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
TZS4678 to TZS4717
ORDERING CODE
TZS4678-GS08 to TZS4717-GS08
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
2500 (per 7" reel)
12 500/box
PACKAGE
PACKAGE NAME
QuadroMELF SOD-80
WEIGHT
34 mg
MOLDING COMPOUND
FLAMMABILITY RATING
n/a
MOISTURE SENSITIVITY
LEVEL
n/a
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 100 mA
On PC board 50 mm x 50 mm x 1.6 mm
TEST CONDITION
R
thJA
300 K/W
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
500
175
-65 to +175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.8, 20-Nov-13
Document Number: 85613
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
TEST CURRENT
I
ZT1
mA
MAX.
1.89
2.1
2.31
2.52
2.835
3.15
3.465
3.78
4.095
4.515
4.935
5.355
5.88
6.51
7.14
7.875
8.61
9.135
9.555
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29
27.4
26.2
24.8
21.6
20.4
19
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
I
ZT2 (2)
μA
MAX.
7.5
5
4
2
1
0.8
7.5
7.5
5
4
10
10
10
10
10
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
1
1
1
1
1
1
1.5
2
2
2
3
3
4
5
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
20.4
21.2
22.8
25
27.3
29.6
32.6
REVERSE CURRENT
(3)
I
R
at V
R
V
VOLTAGE CHANGE
(4)
V
Z
V
MAX.
0.7
0.7
0.75
0.8
0.85
0.9
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.9
0.75
0.5
0.1
0.08
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.22
0.24
0.25
0.27
0.28
0.3
0.33
0.36
0.39
0.43
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE RANGE
PART
NUMBER
MIN.
TZS4678
TZS4679
TZS4680
TZS4681
TZS4682
TZS4683
TZS4684
TZS4685
TZS4686
TZS4687
TZS4688
TZS4689
TZS4690
TZS4691
TZS4692
TZS4693
TZS4694
TZS4695
TZS4696
TZS4697
TZS4698
TZS4699
TZS4700
TZS4701
TZS4702
TZS4703
TZS4704
TZS4705
TZS4706
TZS4707
TZS4708
TZS4709
TZS4710
TZS4711
TZS4712
TZS4713
TZS4714
TZS4715
TZS4716
TZS4717
1.71
1.9
2.09
2.28
2.565
2.85
3.135
3.42
3.705
4.085
4.465
4.845
5.32
5.89
6.46
7.125
7.79
8.265
8.645
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
V
Z
at I
ZT1
V
NOM.
(1)
1.8
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Notes
(1)
Tolerancing and voltage designation (V ). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage.
Z
(2)
Maximum zener current ratings (I ). Maximum zener current ratings are based on maximum zener voltage of the individual units
ZM
(3)
Reverse leakage current (I ). Reverse leakage currents are guaranteed and measured at V as shown on the table.
R
R
(4)
Maximum voltage change (V ). Voltage change is equal to the difference between V at 100 μA and V at 10 μA.
Z
Z
Z
Rev. 1.8, 20-Nov-13
Document Number: 85613
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
600
500
400
300
200
100
0
0
95 9602
Vishay Semiconductors
P
tot
- Total Power Dissipation (mW)
15
TK
VZ
- Temperature Coefficient
of
V
Z
(10
-4
/K)
10
5
I
Z
= 5 mA
0
-5
80
120
160
40
T
amb
- Ambient Temperature (°C)
200
95 9600
0
10
20
30
40
50
V
Z
- Z-Voltage (V)
Fig. 1 -
Total Power Dissipation vs. Ambient Temperature
Fig. 4 -
Temperature Coefficient of V
Z
vs. Z-Voltage
1000
200
T
j
= 25 °C
100
C
D
- Diode Capacitance (pF)
V
Z
-
Voltage
Change (mV)
150
V
R
= 2
V
T
j
= 25 °C
100
I
Z
= 5 mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 2 -
Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 5 -
Diode Capacitance vs. Z-Voltage
1.3
100
V
Ztn
- Relative Voltage Change
V
Ztn
= V
Zt
/V
Z
(25 °C)
I
F
- Forward Current (mA)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
10
1.1
1
T
j
= 25 °C
1.0
0.9
0
- 2 x 10 /K
- 4 x 10
-4
/K
-4
0.1
0.01
0.8
- 60
95 9599
0.001
0
60
120
180
240
959605
0
0.2
0.4
0.6
0.8
1.0
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Fig. 3 -
Typical Change of Working Voltage vs.
Junction Temperature
Fig. 6 -
Forward Current vs. Forward Voltage
Rev. 1.8, 20-Nov-13
Document Number: 85613
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
Vishay Semiconductors
50
P
tot
= 500 mW
T
amb
= 25 °C
100
80
40
I
Z
- Z-Current (mA)
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
60
30
40
20
20
10
0
0
95 9604
0
4
6
8
12
20
95 9607
15
20
25
30
35
V
Z
- Z-Voltage (V)
Fig. 7 -
Z-Current vs. Z-Voltage
V
Z
- Z-Voltage (V)
Fig. 8 -
Z-Current vs. Z-Voltage
1000
r
Z
- Differential Z-Resistance (Ω)
I
Z
= 1 mA
100
5 mA
10 10 mA
1
0
95 9606
T
j
= 25 °C
5
10
15
20
25
V
Z
- Z-Voltage (V)
Fig. 9 -
Differential Z-Resistance vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
R
thJA
= 300 K/W
T = T
j max.
- T
amb
t
p
/T = 0.01
t
p
/T = 0.1
t
p
/T = 0.02
i
ZM
= (-
V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
t
p
/T = 0.05
10
1
10
-1
10
0
10
1
t
p
- Pulse Length (ms)
10
2
95 9603
Fig. 10 -
Thermal Response
Rev. 1.8, 20-Nov-13
Document Number: 85613
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZS4678 to TZS4717
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
QuadroMELF SOD-80
Vishay Semiconductors
1.6 (0.063)
1.4 (0.055)
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap
between
plug and glass can
be
either on cathode or anode side
Foot print recommendation:
1.25 (0.049) min.
2.5 (0.098) max.
(0
.0
gl
as 67)
s
Cathode identification
1.
7
5 (0.197) ref.
96 12071
Rev. 1.8, 20-Nov-13
Document Number: 85613
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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