StrongIRFET™
IRFS7734-7PPbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
2.6m
3.05m
197A
G
S
max
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
Base Part Number
IRFS7734-7PPbF
Package Type
D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
D
Drain
S
Source
Complete Part Number
IRFS7734-7PPbF
IRFS7734TRL7PP
(
RDS(on), Drain-to -Source On Resistance m
)
12
200
ID = 100A
10
150
8
6
TJ = 125°C
ID , Drain Current (A)
20
100
4
50
2
TJ = 25°C
0
4
8
12
16
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC , CaseTemperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximium Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
IRFS7734-7PPbF
Max.
197
139
600
294
2.0
± 20
-55 to + 175
300
350
670
See Fig 14, 15, 23a, 23b
Typ.
–––
–––
Max.
0.51
40
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
mJ
A
mJ
Units
°C/W
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
53
–––
2.6 3.05
3.1
–––
–––
3.7
–––
1.0
––– 150
––– 100
––– -100
2.0
–––
Units
V
mV/°C
m
m
V
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 75 V, V
GS
= 0V
V
DS
= 75V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.07mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1314A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C..
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 37A, V
GS
=10V.
2
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April 7, 2015
IRFS7734-7PPbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
182
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S V
DS
= 10V, I
D
=100A
180 270
I
D
= 100A
45
–––
V
DS
= 38V
nC
54
–––
V
GS
= 10V
126 –––
17
–––
V
DD
= 38V
I
D
= 100A
85
–––
ns
123 –––
R
G
= 2.7
V
GS
= 10V
75
–––
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
–––
––– 10130 –––
––– 820 –––
––– 506 –––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
715
935
–––
–––
Diode Characteristics
Typ. Max. Units
–––
–––
–––
4.8
46
51
73
95
2.7
197
A
600
1.2
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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April 7, 2015
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
IRFS7734-7PPbF
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
BOTTOM
100
BOTTOM
4.0V
1
4.0V
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.5
VDS = 25V
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
60µs PULSE WIDTH
100
ID = 100A
VGS = 10V
2.0
TJ = 175°C
10
TJ = 25°C
1
1.5
1.0
0.1
2.0
3.0
4.0
5.0
6.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 100A
VDS= 60V
VDS= 38V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
50
100
150
200
250
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs.
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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April 7, 2015
1000
IRFS7734-7PPbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1msec
100
100µsec
100
TJ = 175°C
TJ = 25°C
10msec
10
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
100
Id = 1.0mA
Fig 10.
Maximum Safe Operating Area
2.0
1.5
Energy (µJ)
90
1.0
80
0.5
70
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.0
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
(
RDS(on), Drain-to -Source On Resistance
m
)
Fig 12.
Typical C
oss
Stored Energy
4.5
VGS = 5.5V
VGS = 6.0V
4.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
3.5
3.0
2.5
0
50
100
150
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2015 International Rectifier
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April 7, 2015
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