BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
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•
High Current: 1.0 A
•
The SOT−223 package can be soldered using wave or reflow. The
•
•
•
•
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1G
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Collector Current − Peak (Note 1)
Total Power Dissipation
@ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
D
1.5
12
T
J
, T
stg
−65 to 150
W
mW/°C
°C
1
Value
80
100
5
1
2
Unit
Vdc
Vdc
Vdc
Adc
Adc
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
Symbol
R
qJA
Max
83.3
Unit
°C/W
XXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
10
ORDERING INFORMATION
°C
Sec
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Reference SOA curve.
2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
©
Semiconductor Components Industries, LLC, 2016
1
March, 2018 − Rev. 14
Publication Order Number:
BCP56T1/D
BCP56 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 5.0 mA, V
CE
= 2.0 V)
(I
C
= 150 mA, V
CE
= 2.0 V)
h
FE
All Part Types
BCP56
BCP56−10
BCP56−16
All Types
V
CE(sat)
V
BE(on)
25
40
63
100
25
−
−
−
−
−
−
−
−
−
−
250
160
250
−
0.5
1.0
Vdc
Vdc
−
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
100
80
5.0
−
−
−
−
−
−
−
−
−
−
100
10
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
(I
C
= 500 mA, V
CE
= 2.0 V)
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
SWITCHING CHARACTERISTICS
Rise Time
(V
CC
= 30 Vdc, I
C
= 150 mA, I
B1
= 15 mA)
Delay Time
(V
CC
= 30 Vdc, I
C
= 150 mA, I
B1
= 15 mA)
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mA, I
B1
= 15 mA, I
B2
= 15 mA)
Fall Time
(V
CC
= 30 Vdc, I
C
= 150 mA, I
B1
= 15 mA, I
B2
= 15 mA)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 35 MHz)
t
r
t
d
t
s
t
f
−
−
−
−
14
9
714
58
−
−
−
−
ns
ns
ns
ns
f
T
−
130
−
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%
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2
BCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1000
V
CE
= 2 V
hFE, DC CURRENT GAIN
T
A
= 150°C
125°C
25°C
- 55°C
-
65°C
100
10
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 1. DC Current Gain
f T, CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)
1000
80
60
T
J
= 25°C
C, CAPACITANCE (pF)
40
C
ibo
100
20
10
8.0
6.0
C
obo
0.2
0.5 1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
10
1.0
100
10
I
C
, COLLECTOR CURRENT (mA)
1000
4.0
0.1
Figure 2. Current−Gain − Bandwidth Product
Figure 3. Capacitance
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
150°C
25°C
−55°C
I
C
/I
B
= 10
0.1
−55°C
0.01
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
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3
BCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
150°C
25°C
−55°C
V
CE
= 2 V
1.0
T
J
= 25°C
0.8
I
C
= 10 mA
50
mA
100 mA
250 mA
500 mA
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.05
0.1
0.2
1.0 2.0
0.5
5.0
I
B
, BASE CURRENT (mA)
10
20
50
Figure 6. Base Emitter Voltage vs. Collector
Current
Figure 7. Collector Saturation Region
1
I
C
, COLLECTOR CURRENT (A)
1S
100 mS
10 mS
0.1
1 mS
P
D
, POWER DISSIPATION (W)
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
0.0
0
20
100
40
60
80
120
T
A
, AMBIENT TEMPERATURE (°C)
140
160
Figure 8. Safe Operating Area
Figure 9. Power Derating Curve
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4
BCP56 Series
ORDERING INFORMATION
Device
BCP56T1G
SBCP56T1G*
BCP56T3G
SBCP56T3G*
BCP56−10T1G
SBCP56−10T1G*
BCP56−10T3G
NSVBCP56−10T3G*
BCP56−16T1G
SBCP56−16T1G*
BCP56−16T3G
SBCP56−16T3G*
BH−16
BH−16
BH−10
BH−10
BH
Marking
BH
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000 / Tape & Reel
4000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
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5
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