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MUR2100E

产品描述Rectifiers 1000V 2A UltraFast
产品类别分立半导体    二极管   
文件大小57KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MUR2100E概述

Rectifiers 1000V 2A UltraFast

MUR2100E规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码DO-41
包装说明LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
针数2
制造商包装代码59-10
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
其他特性FREE WHEELING DIODE
应用ULTRA FAST RECOVERY POWER
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)2.2 V
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流35 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压1000 V
最大反向恢复时间0.1 µs
表面贴装NO
技术AVALANCHE
端子面层Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

下载PDF文档
MUR2100E
Preferred Device
SWITCHMODEt
Power Rectifier
Ultrafast “E” Series with High Reverse
Energy Capability
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
http://onsemi.com
20 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
These are Pb−Free Devices*
ULTRAFAST RECTIFIER
2.0 AMPERES, 1000 VOLTS
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Note 1)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
Operating Junction Temperature and
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
Value
1000
Unit
V
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A
MUR2100E
YYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
2.0 @
T
A
= 35°C
35
A
A
T
J
, T
stg
−65 to
+175
°C
ORDERING INFORMATION
Device
MUR2100E
Package
Axial Lead**
Axial Lead**
Axial Lead**
Axial Lead**
Shipping
1000 Units/Bag
1000 Units/Bag
5000/Tape & Reel
5000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance,
Junction−to−Ambient
Symbol
R
qJA
Value
(Note 3)
Unit
°C/W
MUR2100EG
MUR2100ERL
MUR2100ERLG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**This package is inherently Pb−Free.
Preferred
devices are recommended choices for future use
and best overall value.
1
July, 2006 − Rev. 6
Publication Order Number:
MUR2100E/D

MUR2100E相似产品对比

MUR2100E MUR2100ERL
描述 Rectifiers 1000V 2A UltraFast Rectifiers 1000V 2A UltraFast
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
零件包装代码 DO-41 DO-41
包装说明 LEAD FREE, PLASTIC, CASE 59-10, 2 PIN LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
针数 2 2
制造商包装代码 59-10 59-10
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE
应用 ULTRA FAST RECOVERY POWER ULTRA FAST RECOVERY POWER
外壳连接 ISOLATED ISOLATED
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 2.2 V 2.2 V
JEDEC-95代码 DO-41 DO-41
JESD-30 代码 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3
最大非重复峰值正向电流 35 A 35 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 175 °C 175 °C
最大输出电流 2 A 2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 LONG FORM LONG FORM
峰值回流温度(摄氏度) 260 260
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 1000 V 1000 V
最大反向恢复时间 0.1 µs 0.1 µs
表面贴装 NO NO
技术 AVALANCHE AVALANCHE
端子面层 Tin (Sn) Tin (Sn)
端子形式 WIRE WIRE
端子位置 AXIAL AXIAL
处于峰值回流温度下的最长时间 40 40
Base Number Matches 1 1

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