(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
(2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
T
stg
T
J
dv/dt
Value
100
Unit
V
10
20
20
150
0.5
−65
to +175
−65
to +175
10,000
A
A
A
A
°C
°C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
(Per Leg)
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 2)
2. When mounted using minimum recommended pad size on FR−4 board.
Symbol
R
qJC
R
qJA
Value
2.0
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 10 Amp, T
C
= 125°C)
(i
F
= 10 Amp, T
C
= 25°C)
(i
F
= 20 Amp, T
C
= 125°C)
(i
F
= 20 Amp, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
Value
0.75
0.85
0.85
0.95
6.0
0.1
Unit
V
i
R
mA
ORDERING INFORMATION
Device
MBRB20100CTG
MBRB20100CTT4G
NRVBB20100CTT4G
NRVBBS20100CTT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
50
20
150°C
10
100°C
5
3
T
J
= 25°C
125°C
IR , REVERSE CURRENT (mA)
1.0
10
T
J
= 150°C
125°C
100°C
0.1
0.01
1
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.001
25°C
0.0001
0
20
40
60
80
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
20
dc
15
SQUARE WAVE
10
RATED VOLTAGE APPLIED
R
qJC
= 2°C/W
AVERAGE POWER (WATTS)
20
18
16
14
12
10
8
6
Figure 2. Typical Reverse Current Per Diode
I
PK
/I
AV
= 5
PI
I
PK
/I
AV
= 10
I
PK
/I
AV
= 20
SQUARE
WAVE
DC
4
2
T
J
= 125°C
5.0
0
80
100
Figure 3. Typical Current Derating, Case, Per Leg
120
140
T
C
, CASE TEMPERATURE (°C)
160
180
0
0
2
4
6
8
10
12
14
AVERAGE CURRENT (AMPS)
16
18
20
Figure 4. Average Power Dissipation & Average Current
http://onsemi.com
3
MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G
PACKAGE DIMENSIONS
D
2
PAK
CASE 418B−04
ISSUE K
C
E
−B−
4
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
V
W
1
2
3
S
A
−T−
SEATING
PLANE
K
G
D
3 PL
M
J
H
T B
M
W
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
L
M
R
N
U
L
P
L
M
M
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.504
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
2X
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
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For additional information, please contact your local
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
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