NTD5807N, NVD5807N
Power MOSFET
Features
40 V, 23 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
•
•
•
•
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
−
NVD5807N
These Devices are Pb−Free and are RoHS Compliant
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
G
Value
40
"20
"30
23
16
P
D
I
DM
T
J
, T
stg
I
S
E
AS
33
45
−55
to
175
23
29.4
W
A
°C
A
mJ
Unit
V
V
V
A
1 2
3
1
2
IPAK
CASE 369D
3
(Straight Lead
DPAK)
S
N−CHANNEL MOSFET
4
4
www.onsemi.com
V
(BR)DSS
40 V
R
DS(on)
MAX
37 mW @ 4.5 V
31 mW @ 10 V
D
I
D
MAX
16 A
23 A
Applications
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Gate−to−Source Voltage
−
Non−Repetitive (t
p
< 10
mS)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
Symbol
V
DSS
V
GS
V
GS
I
D
t
p
= 10
ms
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, R
G
= 25
W,
I
L(pk)
= 14 A, L = 0.3 mH, V
DS
= 40 V)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
AYWW
58
07NG
4
Drain
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
Drain 3
1
Gate Source
A
Y
WW
5807N
G
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Value
4.5
107
Unit
°C/W
1 2 3
Gate Drain Source
1. Surface−mounted on FR4 board using the minimum recommended pad size.
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
April, 2017
−
Rev. 6
1
Publication Order Number:
NTD5807N/D
AYWW
58
07NG
NTD5807N, NVD5807N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 4.5 V, I
D
= 4.0 A
Forward Transconductance
V
DS
= 10 V, I
D
= 15 A
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
T
J
= 25°C
T
J
= 150°C
V
GS
= 10 V, V
DD
= 20 V,
I
D
= 30 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DD
= 20 V,
I
D
= 30 A, R
G
= 2.5
W
11.2
111
11.2
3.2
6.7
20.4
15.6
2.0
ns
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 5.0 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
603
96
73
12.6
0.76
2.2
3.1
20
nC
pF
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
40
38
1.0
100
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.4
−5.8
20
29
8.1
2.5
V
mV/°C
31
37
mW
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.91
0.76
15.7
10.75
5.0
6.1
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTD5807N, NVD5807N
TYPICAL PERFORMANCE CHARACTERISTICS
45
40
I
D
, DRAIN CURRENT (A)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
50
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
40
30
T
J
= 25°C
20
10
0
T
J
= 150°C
T
J
=
−55°C
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10 V
V
GS
= 5 V
T
J
= 25°C
4.5 V
4.2 V
4.0 V
3.8 V
3.4 V
3.0 V
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.025
V
GS
= 10 V
0.023
0.021
0.019
0.017
0.015
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.040
0.038
0.036
0.034
0.032
0.030
0.028
0.026
0.024
0.022
0.020
0.018
0.016
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
5
10
15
20
25
5
10
15
20
25
30
35
40
45
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Drain Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
I
D
= 5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1,000
100
10
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 25°C
1.0
0.1
0
25
50
75
100
125
150
175
2
12
22
32
42
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NTD5807N, NVD5807N
TYPICAL PERFORMANCE CHARACTERISTICS
1500
V
GS
= 0 V
1250
C, CAPACITANCE (pF)
T
J
= 25°C
1000
750
500
250
0
C
iss
12
QT
9
V
DS
6
Q
gs
Q
gd
I
D
= 5 A
T
J
= 25°C
V
GS
24
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
18
12
C
rss
C
oss
3
6
10 5
Vgs
0
5
10
Vds
15
20
25
30
35
40
0
0
2
4
6
8
10
12
14
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
V
DD
= 32 V
I
D
= 30 A
V
GS
= 10 V
t, TIME (ns)
t
d(on)
t
d(off)
t
r
20
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
I
S
, SOURCE CURRENT (A)
15
T
J
= 25°C
10
t
f
10
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
10
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
ms
1 ms
10 ms
dc
1
0.1
0.1
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
NTD5807N, NVD5807N
TYPICAL PERFORMANCE CHARACTERISTICS
10
r(t), Effective Transient Thermal Resistance
(°C/W)
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
1
0.1
0.00001
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
NTD5807NG
NTD5807NT4G
NVD5807NT4G
NVD5807NT4G−VF01
Package
IPAK (Straight Lead DPAK)
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
