Si1563DH
Vishay Siliconix
Complementary 20 V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
R
DS(on)
(Ω)
0.280 at V
GS
= 4.5 V
0.360 at V
GS
= 2.5 V
0.450 at V
GS
= 1.8 V
0.490 at V
GS
= - 4.5 V
P-Channel
- 20
0.750 at V
GS
= - 2.5 V
1.10 at V
GS
= - 1.8 V
I
D
(A)
1.28
1.13
1.00
- 1.00
- 0.81
- 0.67
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Thermally Enhanced SC-70 Package
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
SOT-363
SC-70 (6-LEADS)
D
1
S
1
1
6
D
1
Marking Code
EB
G
1
2
5
G
2
XX
YY
S
2
Lot Traceability
and Date Code
Part # Code
G
1
G
2
D
2
3
4
S
2
Top View
Ordering Information:
Si1563DH-T1-E3 (Lead (Pb)-free)
Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
N-Channel
D
2
P-Channel
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.61
0.74
0.38
1.28
0.92
4.0
0.48
0.57
0.30
- 0.61
0.30
0.16
- 55 to 150
5s
Steady State
20
±8
1.13
0.81
- 1.00
- 0.72
- 3.0
- 0.48
0.57
0.3
W
°C
5s
P-Channel
Steady State
- 20
±8
- 0.88
- 0.63
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71963
S10-1054-Rev. B, 03-May-10
www.vishay.com
1
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
130
170
80
Maximum
170
220
100
°C/W
Unit
Si1563DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 100 µA
V
DS
= V
GS
, I
D
= - 100 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 1.13 A
V
GS
= - 4.5 V, I
D
= - 0.88 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 0.99 A
V
GS
= - 2.5 V, I
D
= - 0.71 A
V
GS
= 1.8 V, I
D
= 0.20 A
V
GS
= - 1.8 V, I
D
= - 0.20 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 0.48 A, dI/dt = 100 A/µs
N-Channel
V
DD
= 10 V, R
L
= 20
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 20
Ω
I
D
≅
- 0.5 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.13 A
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 0.88
A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.25
1.2
0.21
0.3
0.3
0.21
15
18
22
25
25
15
12
12
30
30
25
30
35
40
40
25
20
20
60
60
ns
2
1.8
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 1.13 A
V
DS
= - 10 V, I
D
= - 0.88 A
I
S
= 0.48 A, V
GS
= 0 V
I
S
= - 0.48 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
-2
0.220
0.400
0.281
0.610
0.344
0.850
2.6
1.5
0.8
- 0.8
1.2
- 1.2
0.280
0.490
0.360
0.750
0.450
1.10
S
V
Ω
0.45
- 0.45
1
1
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71963
S10-1054-Rev. B, 03-May-10
Si1563DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
V
GS
= 5 V thru 2 V
2.0
T
C
= - 55 °C
25 °C
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.5
1.5 V
1.0
1.5
125 °C
1.0
0.5
1V
0.0
0
1
2
3
4
0.5
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.6
160
Transfer Characteristics
0.5
R
DS(on)
- On-Resistance (Ω)
120
0.4
V
GS
= 1.8 V
0.3
V
GS
= 2.5 V
V
GS
= 4.5 V
0.2
C - Capacitance (pF)
C
iss
80
40
0.1
C
rss
0.0
0.0
0
0.5
1.0
I
D
- Drain Current (A)
1.5
2.0
0
4
C
oss
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 10 V
I
D
= 1.28 A
4
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
V
GS
= 4.5 V
I
D
= 1.13 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
3
1.2
2
1.0
1
0.8
0
0.0
0.3
0.6
0.9
1.2
1.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71963
S10-1054-Rev. B, 03-May-10
www.vishay.com
3
Si1563DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
T
J
= 150 °C
1
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
0.6
0.5
0.4
I
D
= 1.13 A
0.3
T
J
= 25 °C
0.2
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.2
I
D
= 100
µA
4
5
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance (V)
0.0
Power (W)
3
- 0.1
2
- 0.2
1
- 0.3
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
10
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
Limited by R
DS(on)
*
P(t) = 0.0001
I
D
- Drain Current (A)
1
I
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
P(t) = 0.1
P(t) = 1
P(t) = 10, DC
P(t) = 0.001
P(t) = 0.01
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 71963
S10-1054-Rev. B, 03-May-10
Si1563DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
2. Per Unit Base = R
thJA
= 170 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71963
S10-1054-Rev. B, 03-May-10
www.vishay.com
5
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